Last update: 22.10.2004
The discovery of tunneling ionization of deep impurities by contactless application
of a strong uniform electric field using short FIR laser pulses disclosed a
new method for probing deep centers in semiconductors. The dependence of the
ionization probability on the electric field strength permits to determine defect
tunneling times, the structure of the adiabatic potentials of the defect, the
Huang-Rhys parameters of electron-phonon interaction, and the trapping kinetics
of nonequilibrium carriers .
E. Ziemann, S. D. Ganichev, I. N. Yassievich,
V. I. Perel, and W. Prettl,
Characterization of deep impurities in semiconductors by terahertz tunneling
ionization,
J. Appl. Phys. 87, 3843 (2000).(PDF)
S. D. Ganichev, E. Ziemann, I. N. Yassievich,
W. Prettl, A. Istratov, and E. R. Weber,
Distinction between the Poole-Frenkel and tunneling models of electric
field-stimulated carrier emission from deep levels in semiconductors,
Phys. Rev. B 61, 10361 (2000).(PDF)
S. D. Ganichev, I. N. Yassievich, W. Raab, E. Zepezauer,
and W. Prettl,
Storage of electrons in shallow donor excited states of GaP:Te,
Phys. Rev. B (Rapid Communic.) 55, R9243 (1997).(PDF)
S. D. Ganichev, J. Diener, I. N. Yassievich, W. Prettl,
B. K. Meyer and K. W. Benz,
Tunnelling ionization of autolocalized DX- centers in terahertz fields,
Phys. Rev. Lett. 75, 1590 (1995).(PDF)
S. D. Ganichev, I. N. Yassievich, and W. Prettl,
Tunnel ionization of deep impurities by far-infrared radiation,
Semiconductors Sci. and Technology 11, 679 (1996).(PDF)
S. D. Ganichev, I. N. Yassievich, and W. Prettl,
Review: Ionization of deep impurities by far-infrared radiation,
Phys. Solid State 39, 1703 (1997).(PDF)
S. D. Ganichev, J. Diener, I. N. Yassievich, and
W. Prettl,
Poole-Frenkel Effect in Terahertz Electromagnetic Fields,
Europhys. Lett. 29, 315 (1995).(PDF)
S. D. Ganichev, J. Diener, and W. Prettl,
Direct tunnel ionization of deep impurities in the electric field of far-infrared
radiation,
Solid State Communic. 92, 883 (1994).(PDF)