Photogalvanic effect in quantum wells: see Spin Photocurrents

      Teraherz radiation induced photogalvanic effect in bulk semiconductors:     

1. E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, Yu. B. Lyanda-Geller, and I. D. Yaroshetskii,
   Linear photogalvanic effect in p-type GaSb at infrared and submillimeter wavelengths,
   Phys. Solid State 35, 238 (1993).(PDF)
2. E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, Yu. B. Lyanda -Geller, and I. D. Yaroshetskii,
   Linear photogalvanic effect in gallium arsenide in submillimeter region,
   J. Crystal Properties Preparation 19-20, 327 (1989).(PDF)
3. E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, Yu. B. Lyanda -Geller, and I. D. Yaroshetskii,
   Linear photogalvanic effect in p-GaAs in the classical region of frequency,
   Sov. Phys. Solid State 31, 63 (1989).(PDF)
4. A. V. Andrianov, E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, and I. D. Yaroshetskii,
   Fast device for measuring polarization characteristics of submillimeter and IR laser pulses,
   Sov. Tech. Phys. Lett. 14, 580 (1988).(PDF)
5. E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, Yu. B. Lyanda-Geller, and I. D. Yaroshetskii,
   Linear photogalvanic effect in the submillimeter spectral range,
   Sov. Phys. Solid State 30, 418 (1988).(PDF)