Last update: 22.10.2004    

1. A. Ya. Shul'man, S. D. Ganichev, E. M. Dizhur, I. N. Kotel'nikov, E. Zepezauer, and W. Prettl,
   Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR radiation,
   Physica B 272, 442 (1999).(PDF)
2. A. Ya. Shul'man, S. D. Ganichev, I. N. Kotel'nikov, E. M. Dizhur, W. Prettl, A. B. Ormont, Yu. V. Fedorov, and W. Prettl,
   Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition,
   phys. stat. sol. a 175, 289 (1999).(PDF)
3. I. N. Kotel'nikov, A. Ya. Shul'man, S. D. Ganichev, N. A. Varvanin, B. Mayerhofer, and W. Prettl,
   Heating of two-dimensional electron gas and LO-phonons in delta-doped GaAs by far-infrared radiation,
   Solid State Communic. 97, 827 (1996).(PDF)
4. S. D. Ganichev, A. Ya. Shul'man, I. N. Kotel'nikov, N. A. Mordovets, and W. Prettl,
   Response of tunnel Schottky-barrier junction to radiation pressure of FIR radiation,
   Int. J. of Infrared and Millimeter Waves 17, 1353 (1996).(PDF)
5. I. N. Kotel'nikov, A. Ya. Shul'man, N. A. Varvanin, S. D. Ganichev, B. Mayerhofer, and W. Prettl,
   Photoresistive effect in in delta-doped GaAs/metal tunnel junctions,
   JETP Lett. 62, 53 (1995).(PDF)
6. I. N. Kotel'nikov, A. Ya. Shul'man, N. A. Mordovets,
   S. D. Ganichev, and W. Prettl,
   Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs,
   J. Phys. of Low Dim. Structures 12, 133 (1995).(PDF)
7. S. D. Ganichev, K. Yu. Gloukh, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and I. D. Yaroshetskii,
   Tunneling in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light,
   Sov. Phys. JETP 75, 495 (1992).(PDF)
8. S. D. Ganichev, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and I. D. Yaroshetskii,
   Photoresistive effect in n-GaAs/Au tunnel junctions during plasma reflection of laser light,
   Sov. Phys. JETP Lett. 44, 301 (1986).(PDF)