Last update: 22.10.2004    

    Spin-dependent tunneling through a symmetric semiconductor barrier


V. I. Perel’, S. A. Tarasenko, and I. N. Yassievich
A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia


S. D. Ganichev, V. V. Bel’kov, and W. Prettl
Fakultät für Physik, Universität Regensburg, D-93040 Regensburg, Germany

Received 30 December 2002

PHYSICAL REVIEW B 67, 201304R (2003)

Abstract

The problem of electron tunneling through a symmetric semiconductor barrier based on zinc-blendestructure material is studied. The k3 Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunneling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers. (PDF)