Stand: 12.12.2011

Publications

Monography

S.D. Ganichev and W. Prettl,
Intense Terahertz Excitation of Semiconductors
Oxford University Press (2006)

Book chapters

S.D. Ganichev, M. Trushin, and J. Schliemann, Spin orientation by electric current
in Handbook of Spin Transport and Magnetism,
eds. I. Zutic and E.Y. Tsymbal (Chapman and Hall 2011) pp. 487-497, ISBN: 1439803773.

E.L. Ivchenko and S.D. Ganichev, Spin Photogalvanics
in Spin Physics in Semiconductors,
ed. M.I. Dyakonov (Springer Verlag 2008) pp. 245-277, ISBN: 3540788190.

V.V. Bel'kov and S.D. Ganichev, Zero-bias spin separation
in Spintronic Semiconductors,
eds. W.M. Chen and I. Buyanova (Pan Stanford Publishing 2010) pp. 243-265, ISBN: 9814267368.

S.D. Ganichev, Spin-galvanic effect and spin orientation induced circular photogalvanic effect in quantum well structures in series Advances in Solid State Physics, Vol. 43,
ed. B. Kramer (Springer-Verlag Berlin-Heidelberg 2003) pp. 427-442, ISBN: 978-3-540-40150-6.

S.D. Ganichev, K.Yu. Gloukh, I.N. Kotel'nikov, N.A. Mordovets, A.Ya. Shul'man, and I.D. Yaroshetskii, Fast point detector of submillimeter radiation p. 567, and
E.V. Beregulin, S.D. Ganichev, K.Yu. Gloukh, G.M. Gusev, Z.D. Kvon, M.Yu. Martisov, A.Ya. Shik, and I.D. Yaroshetskii, Rapid submillimeter photoconductivity and energy relaxation of a two-dimensional electron gas near the surface of silicon, p. 382 in Best of Soviet Semiconductor Physics and Technology (1989-1990),
eds. M. Levinstein and M. Shur (World Scientific 1995), ISBN: 9810215797.

E.V. Beregulin and S.D. Ganichev, Intraband photoconductivity,
in Physics Encyclopedia Vol. 5, ed. A.M. Prochorov (Scientific Edition of the Large Russian Encyclopedia 1995) pp. 355-357, ISBN:5-85270-101-7.

Publications in refereed journals

last

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2012

S. D. Ganichev, C. Drexler, N. Dyakonova, W. Knap, F. Teppe, O. Klimenko
Terahertz polarization analyzer based on field effect transistors Submitted to the CNRS patent office
M. Hirmer, S. N. Danilov, S. Giglberger, J. Putzger, A. Niklas, A. Jäger, K.A. Hiller, S. Löffler, G. Schmalz, B. Redlich, I. Schulz, G. Monkman, and S. D. Ganichev
Spectroscopic Study of Human Teeth and Blood from Visible to Terahertz Frequencies for Clinical Diagnosis of Dental Pulp Vitality Int. J. Infrared, Millimeter and Terahertz Waves (2012)
S. Stachel, P. Olbrich, C. Zoth, U. Hagner, T. Stangl, C. Karl, P. Lutz, V. V. Bel'kov, S. K. Clowes, T. Ashley, A. M. Gilbertson, and S. D. Ganichev
Interplay of spin and orbital magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures
Phys. Rev. B 85, 045305 (2012) (PDF)

2011
Z. D. Kvon, S. N. Danilov, D. A. Kozlov, C. Zoth, N. N. Michailov, S. A. Dvoretzkii, and S. D. Ganichev
Cyclotron resonance of Dirac fermions in HgTe/CdHgTe quantum wells
JETP Lett. 94, xxx (2011). Russian version: Pisma v ZhETP 94, 895-899 (2011).
J. Karch, C. Drexler, P. Olbrich, M. Fehrenbacher, M. Hirmer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, B. Birkner, J. Eroms, D. Weiss, R. Yakimova, S. Lara-Avila, S. Kubatkin, M. Ostler, T. Seyller, and S. D. Ganichev
Terahertz radiation driven chiral edge currents in graphene
Phys. Rev. Lett. 107, 276601 (2011) (PDF)
E. L. Ivchenko and S. D. Ganichev
Ratchet effects in quantum wells with a lateral superlattice
JETP Lett. 93, 673 (2011).
V. I. Chernichkin, A. A. Dobrovolsky, Z. M. Dashevsky, V. A. Kasiyan, V. V. Bel'kov, S. D. Ganichev, S. N. Danilov, L. I. Ryabova, and D. R. Khokhlov
Photocunductivity of PbTe:In films with variable microstructure
Semiconductors 45, 1474 (2011).
Chongyun Jiang, V. A. Shalygin, V. Yu. Panevin, S. N. Danilov, M. M. Glazov, R. Yakimova, S. Lara-Avila, S. Kubatkin, and S. D. Ganichev
Helicity-dependent photocurrents in graphene layers excited by mid-infrared radiation of a CO2-laser
Phys. Rev. B 84, 125429 (2011) (PDF)
Ya. V. Terent'ev, C. Zoth, V. V. Bel'kov, P. Olbrich, C. Drexler, V. Lechner, P. Lutz, M. S. Mukhin, S. A. Tarasenko, A. N. Semenov, V. A. Solov'ev, I. V. Sedova, G. V. Klimko, T. A. Komissarova, S. V. Ivanov, and S. D. Ganichev
Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures
Appl. Phys. Lett. 99, 072111 (2011) (PDF)
P. Olbrich, J. Karch, E. L. Ivchenko, J. Kamann, B. März, M. Fehrenbacher, D. Weiss, and S. D. Ganichev
Classical ratchet effects in heterostructures with a lateral periodic potential
Phys. Rev. B 83, 165320 (2011) (PDF)
V. Lechner, L. E. Golub, F. Lomakina, V. V. Bel'kov, P. Olbrich, S. Stachel, I. Caspers, M. Griesbeck, M. Kugler, M. J. Hirmer, T. Korn, C. Schüller, D. Schuh, W. Wegscheider, and S. D. Ganichev
Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effects in GaAs/AlGaAs quantum well structures
Phys. Rev. B 83, 155313 (2011) (PDF)
J. Karch, S. A. Tarasenko, E. L. Ivchenko, J. Kamann, P. Olbrich, M. Utz, Z. D. Kvon, and S. D. Ganichev
Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors
Phys. Rev. B Rapid Communications 83, 121312(R) (2011), Editors' Suggestion (PDF)

2010
S. Dvoretsky, N. Mikhailov, Y. Sidorov, V. Shvets, S. Danilov, B. Wittmann, and S. D. Ganichev
Growth of HgTe Quantum Wells for IR to THz Detectors
J. of Electronic Materials39, 918 (2010) (PDF)
J. Karch, P. Olbrich, M. Schmalzbauer, C. Zoth, C. Brinsteiner, M. Fehrenbacher, U. Wurstbauer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, J. Eroms, R. Yakimova, S. Lara-Avila, S. Kubatkin, and S. D. Ganichev
Dynamic Hall Effect Driven by Circularly Polarized Light in a Graphene Layer
Phys. Rev. Lett. 105, 227402 (2010) (PDF)
C. Drexler, V. V. Bel'kov, B. Ashkinadze, P. Olbrich, C. Zoth, V. Lechner, Ya. V. Terent'ev, D. R. Yakovlev, G. Karczewski, T. Wojtowicz, D. Schuh, W. Wegscheider, and S. D. Ganichev
Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation
Appl. Phys. Lett. 97, 182107 (2010) (PDF)
J. Karch, P. Olbrich, M. Schmalzbauer, C. Zoth, Ch. Brinsteiner, M.Fehrenbacher, U. Wurstbauer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, J. Eroms, R. Yakimova, S. Lara-Avila, S. Kubatkin, and S. D. Ganichev
Photon helicity driven current in graphene
Proc. 1st Workshop of GK 1570: Electronic Properties of Carbon Based Nanostructures (2010)
C. Drexler, N. Dyakonova, M. Schafberger, K. Karpierz, J. Karch, H. Videlier, Y. Meziani, P. Olbrich, W. Knap, and S. Ganichev
Detection of high power THz radiation by GaAs high electron mobility and Si field effect transistors
Proc. 35th International Conference on Infrared, Millimetre, and Terahertz Waves (IRMMW-THz 35) (2010)
S. D. Ganichev, J. Karch, P. Olbrich, M. Schmalzbauer, C. Zoth, C. Brinsteiner, U. Wurstbauer, M. M. Glazov, S. A. Tarasenko, D. Weiss, J. Eroms, R. Yakimova, S. Lara-Avila, S. Kubatkin, and E. L. Ivchenko
Photon helicity driven electric currents in graphene
Proc. 35th International Conference on Infrared, Millimetre, and Terahertz Waves (IRMMW-THz 35) (2010)
J. Karch, S. A. Tarasenko, P. Olbrich, T. Schönberger, C. Reitmaier, D. Plohmann, Z. D. Kvon, and S. D. Ganichev
Orbital photogalvanic effects in quantum-confined structures
J. Phys.: Condens. Matter 22, 355307 (2010) (PDF)
B. Wittmann, S.N. Danilov, V.V. Bel'kov, S.A. Tarasenko, E.G. Novik, H. Buhmann, C. Brüne, L.W. Molenkamp, Z.D. Kvon, N.N. Mikhailov, S.A. Dvoretsky, N.Q.Vinh, A.F.G. van der Meer, B. Murdin, and S.D. Ganichev
Circular photogalvanic effect in HgTe/CdHgTe quantum well structures
Semicond. Sci. Technol. 25, 095005 (2010) (PDF)
J. Karch, P. Olbrich, M. Schmalzbauer, C. Brinsteiner, U. Wurstbauer, M.M. Glazov, S.A. Tarasenko, E. L. Ivchenko, D. Weiss, J. Eroms, and S.D. Ganichev
Photon helicity driven electric currents in graphene
arXiv: 1002.1047 (2010) (PDF)
D.A. Firsov, L.E. Vorobjev, V.A. Shalygin, A.N. Sofronov, M.Ya. Vinchenko, P. Thumrogsilapa, S.D. Ganichev, S.N. Danilov, A.E. Zhukov
Absorption and modulation of radiation in nanostructures with p-GaAs/AlGaAs QWs
Bulletin of the Russian Academy of Sciences: Physics 74, 91 (2010)

2009
A.V. Galeeva, L.I. Ryabova, A.V. Nikorich, S.D. Ganichev, S.N. Danilov, V.V. Bel'kov, and D.R. Khokhlov
Photoconductivity of narrow band PbSnTe(In) in the terahertz spectal range
JETP Lett. 91, 37 (2009) (PDF)
S.A. Dvoretsky, Z.D. Kvon, N.N. Mikhailov, V.A. Schwez, B. Wittmann, S.N. Danilov, S.D. Ganichev, and A.L. Aseev
HgCdTe-based nanostructures a novel material for photodetectors
J. Opt. Technology 76, 787 (2009)
P. Olbrich, E. L. Ivchenko, R. Ravash, T. Feil, S. D. Danilov, J. Allerdings, D. Weiss, D. Schuh, W. Wegscheider, and S. D. Ganichev
Ratchet effects induced by terahertz radiation in heterostructures with a lateral periodic potential
Phys. Rev. Lett. 103, 090603 (2009) (PDF)
H. Diehl, V.A. Shalygin, L.E. Golub, S.A. Tarasenko, S.N. Danilov, V.V. Bel’kov, E.G. Novik, H. Buhmann, C. Brüne, L. W. Molenkamp, E.L. Ivchenko, and S.D. Ganichev
Nonlinear magneto-gyrotropic photogalvanic effect
Phys. Rev. B 80, 075311 (2009) (PDF)
P. Olbrich, J. Allerdings, V. V. Bel'kov, S. A. Tarasenko, D. Schuh, W. Wegscheider, T. Korn, C. Schüller, D. Weiss, and S. D. Ganichev
Magneto-gyrotropic photogalvanic effect and spin dephasing in (110)-grown GaAs/AlGaAs quantum well structures
Phys. Rev. B 79, 245329 (2009) (PDF)
V. Lechner, L. E. Golub, P. Olbrich, S. Stachel, D. Schuh, W. Wegscheider, V. V. Bel’kov, and S.D. Ganichev
Tuning of structure inversion asymmetry by the delta-doping position in (001)-grown GaAs quantum wells
Appl. Phys. Lett. 94, 242109 (2009) (PDF)
S. D. Ganichev, S. A. Tarasenko, V. V. Bel'kov, P. Olbrich, W. Eder, D. R. Yakovlev, V. Kolkovsky, W. Zaleszczyk, G. Karczewski, T. Wojtowicz, and D. Weiss
Spin currents in diluted magnetic semiconductors
Phys. Rev. Lett. 102, 156602 (2009) (PDF)
P. Olbrich, S. A. Tarasenko, C. Reitmaier, J. Karch, D. Plohmann, Z. D. Kvon, S. D. Ganichev,
Observation of the orbital circular photogalvanic effect
Phys. Rev. B (Rapid Communic.) 79, 121302(R) (2009) (PDF)
S. N. Danilov, B. Wittmann, P. Olbrich, W. Eder, W. Prettl, L. E. Golub, E. V. Beregulin, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, V. A. Shalygin, N. Q. Vinh, A. F. G. van der Meer, B. Murdin, and S. D. Ganichev
Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures
J. Appl. Physics 105, 013106 (2009) (PDF)

2008
D. Khokhlov, L. Ryabova, A. Nicorici, V. Shklover, S. Ganichev, S. Danilov, and V. Bel'kov,
Terahertz photoconductivity of Pb_{1-x}Sn_xTe(In)
Appl. Phys. Lett. 93, 264103 (2008) (PDF)
B. Wittmann, L. E. Golub, S. N. Danilov, J. Karch, C. Reitmaier, Z. D. Kvon, N. Q. Vinh, A. F. G. van der Meer, B. Murdin, S. D. Ganichev
Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions
Phys. Rev. B 78, 205435 (2008) (PDF)
V. V. Bel'kov and S. D. Ganichev
Magneto-gyrotropic effects in semiconductor quantum wells, review
Semiconductor Science and Technology 23, 114003 (2008) (PDF)
P. Olbrich, D. Plohmann, J. Karch, C. Reitmaier, V. Lechner, S. A. Tarasenko, Z. D. Kvon, and S. D. Ganichev
Circular photogalvanic effect due to quantum interference in the terahertz radiation absorption
Proc. 33rd International Conference on Infrared, Millimetre, and Terahertz Waves (IRMMW-THz 33) (2008)
P. Olbrich, R. Ravash, T. Feil, S.D. Danilov, J. Allerdings, D. Weiss, E.L. Ivchenko, and S.D. Ganichev
Terahertz photocurrents in heterostructures with one-dimensional lateral periodic potential
Proc. 33rd International Conference on Infrared, Millimetre, and Terahertz Waves (IRMMW-THz 33) (2008)
W. Weber, L.E. Golub, S.N. Danilov, J. Karch, C. Reitmaier, B. Wittmann, V.V. Bel’kov, E.L. Ivchenko, Z.D. Kvon, N.Q. Vinh, A.F.G. van der Meer, B. Murdin, and S.D. Ganichev
Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures
Phys. Rev. B 77, 245304 (2008) (PDF)
S.D. Ganichev, W. Weber, J. Kiermaier, S.N. Danilov, P. Olbrich, D. Schuh, W. Wegscheider, Ch. Gerl, D. Bougeard, G. Abstreiter and W. Prettl
All-electric detectors of the polarization state of terahertz laser radiation
J. Appl. Physics 103, 114504 (2008) (PDF)
V.V. Bel'kov, P. Olbrich, S.A. Tarasenko, D. Schuh, W. Wegscheider, T. Korn, C. Schüller, D. Weiss, W. Prettl, and S.D. Ganichev
Symmetry and spin dephasing in (110)-grown quantum wells
Phys. Rev. Lett. 100, 176806 (2008) (PDF)
Z.D. Kvon, S.N. Danilov, N.N. Mikhailov, S.A. Dvoretsky, and S.D.Ganichev
Cyclotron resonance photoconductivity of a two-dimensional electron gas in HgTe quantum wells
Physica E 40, 1885 (2008) (PDF)
S.D. Ganichev
Spin-galvanic effect and spin orientation by current in non-magnetic semiconductors, review,
Int. J. Modern Phys. B 22, 1 (2008)
S.D. Ganichev
Magneto-gyrotropic photogalvanic effects in semiconductor quantum wells
Int. J. Modern Phys. B 22, 115 (2008).
W. Weber, S. Seidl, V.V. Bel'kov, L.E. Golub, E.L. Ivchenko, W. Prettl, Z.D. Kvon, Hyun-Ick Cho and Jung-Hee Lee and S.D. Ganichev
Magneto-gyrotropic photogalvanic effects in GaN quantum wells
Solid. State Comm. 145, 56 (2008) (PDF)

2007
S.D. Ganichev, J. Kiermaier, W. Weber, S.N. Danilov, D. Schuh, Ch. Gerl, W. Wegscheider, D. Bougeard, G. Abstreiter, and W. Prettl
Subnanosecond Ellipticity Detector for Laser Radiation
Appl. Phys. Lett. 91, 091101 (2007) (PDF)
H. Diehl, V.A. Shalygin, S.N. Danilov, S.A. Tarasenko, V.V. Bel'kov, D. Schuh, W. Wegscheider, W. Prettl and S.D. Ganichev
Magneto-gyrotropic photogalvanic effect due to inter-subband absorption in (001)-grown GaAs quantum wells
J. Phys.: Condens. Matter 19, 436232 (2007) (PDF)
S.D. Ganichev, S.N. Danilov, V.V. Bel'kov, S. Giglberger, S.A. Tarasenko, E.L. Ivchenko, D. Weiss, W. Jantsch, F. Schäffler, D. Gruber, and W. Prettl,
Pure spin currents induced by spin-dependent scattering processes in SiGe quantum well structures,
Phys. Rev. B 75, 155317 (2007) (PDF)
H. Diehl, V.A. Shalygin, V.V. Bel'kov, Ch. Hoffmann, S.N. Danilov, T. Herrle, S.A. Tarasenko, D. Schuh, Ch. Gerl, W. Wegscheider, W. Prettl, and S.D. Ganichev,
Spin photocurrents in (110)-grown quantum well structures
New J. Physics 9, Focus on Spintronics in Reduced Dimensions (invited paper), 349 (2007).
W. Weber, J. Kiermeier, S.N. Danilov, D. Schuh, Ch. Gerl, W. Wegscheider, D. Bougeard, G. Abstreiter, W. Prettl, S.D. Ganichev,
Picosecond Polarization Detector for Infrared and Terahertz Radiation ,
Proc. MRS Spring Meeting, San Francisco, USA (2007)
W. Weber, S. Seidl, L.E. Golub, S.N. Danilov, V.V. Bel'kov, E.L. Ivchenko, W. Prettl, Z.D. Kvon, Hyun-Ick Cho and Jung-Hee Lee, S.D. Ganichev,
Rashba Spin-Splitting and Spin Currents in GaN Heterojunctions,
Proc. MRS Spring Meeting, San Francisco, USA (2007). (PDF)
W. Prettl and S.D. Ganichev
Spintronics aided by terahertz exposure,
SPIE, Newsroom 10.1117/2.1200704.0752 (2007).
K. Wagenhuber, V. Shalygin, U. Niedermeier, C. Gerl, W. Wegscheider, T. Korn, R. Schulz, C. Schüller, E.L. Ivchenko, and S.D. Ganichev
High spin polarization of optically-oriented trions in p-doped GaAs-AlGaAs quantum wells
AIP Conf. Proc. 893, 439 (2007)
W. Weber, S.D. Ganichev, S. Seidl, V.V. Bel'kov, L.E. Golub, W. Prettl, Z.D. Kvon, Hyun-Ick Cho, and Jung-Hee Lee
Demonstration Of Rashba Spin Splitting In GaN-based Heterostructures
AIP Conf. Proc. 893, 1311 (2007)
S.D. Ganichev, V.V. Bel'kov, S.A. Tarasenko, S.N. Danilov, S. Giglberger, Ch. Hoffmann, E.L. Ivchenko, D. Weiss, Ch. Gerl, D. Schuh, W. Wegscheider, and W. Prettl,
Scattering Induced Spin Separation at Zero Bias
AIP Conf. Proc. 893, 1255 (2007)
V.A. Shalygin, D.A. Firsov, L.E. Vorobjev, A.N. Sofronov, V.Yu. Panevin, D.V. Kozlov, S.D. Ganichev, S.N. Danilov, A.V. Andrianov, A.O. Zakhar'in, N.N. Zinov'ev, A.Yu. Egorov, O.V. Bondarenko, A.G. Gladyshev, and V.M. Ustinov
Terahertz emission and absorption at lateral electric field in p-GaAsN/GaAs and n-GaAs/AlGaAs heterostructures,
Proc. 15th Int. Symp. Nanostructures: Physics and Technology, Novosibirsk, Russia, (2007).
B. Wittmann, S.N. Danilov, Z.D. Kvon, N.N.Mikhailov, S.A.Dvoretsky, R. Ravash, W. Prettl, S.D.Ganichev,
Photogalvanic effects in HgTe quantum wells,
Proc. 13th Int. Conf. Narrow Gap Semiconductors, Guildford, UK (2007).
Z.D. Kvon, S.N. Danilov, N.N. Mikhailov, S.A. Dvoretsky, S.D. Ganichev,
Cyclotron resonance photoconductivity of a two-dimensional electron gas in HgTe quantum wells,
Proc. 13th Int. Conf. Narrow Gap Semiconductors, Guildford, UK (2007).
S.D. Ganichev, W. Prettl, S.N. Danilov, D.A. Firsov, L.E. Vorobjev, V.A. Shalygin, V.Yu. Panevin, A.N. Sofronov, A.A. Andrianov, A.O. Zakhar'in, A.E. Zhukov, V.S. Mikhrin, and A.P. Vasil'ev
Intraband Emission and Absorption of Terahertz Radiation in GaAs/AlGaAs Quantum Wells
Digest Joint 32st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics (IRMMW-THz2007), IEEE Digest, Catalog number: 07EX1863, ISBN 1-4244-1438-5 Vol. 2, 623 (2007).
J. Kiermaier, W. Weber, S.N. Danilov, D. Schuh, Ch. Gerl, W. Wegscheider, D. Bougeard, G. Abstreiter, W. Prettl, and S.D. Ganichev
Picosecond Polarisation Detector for Infrared and Terahertz Radiation
Digest Joint 32st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics (IRMMW-THz2007), IEEE Digest, Catalog number: 07EX1863, ISBN 1-4244-1438-5 Vol. 1, 124 (2007).
B. Wittmann, S.N. Danilov, Z.D. Kvon, N.N.Mikhailov, S.A.Dvoretsky, R. Ravash, W. Prettl, and S.D. Ganichev
Photogalvanic effects in HgTe quantum wells
Digest Joint 32st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics (IRMMW-THz2007), IEEE Digest, Catalog number: 07EX1863, ISBN 1-4244-1438-5 Vol. 2, 773 (2007)
V.V. Bel'kov, S.D. Ganichev, E.L. Ivchenko, S.A. Tarasenko,
Magneto-induced photogalvanic effect in two-dimensional electron systems,
Proc. 8th Russian Conf. on Semicond. Physics (Ekaterinburg, 2007), p.453.
V.V. Bel'kov, S.D. Ganichev, S.A. Tarasenko, V.A. Shalygin,
Spin-dependent photogalvanic phenomena in (110)-GaAs/AlGaAs nanostructures
Proc. 11th Symp. "Nanophysics and nanoelectronics" (Nizhnii Novgorod, 2007), p 63.
S. Giglberger, L.E. Golub, V.V. Bel'kov, S.N. Danilov, D. Schuh, Ch. Gerl, F. Rohlfing, J. Stahl, W. Wegscheider, D. Weiss, W. Prettl, and S.D. Ganichev,
Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells Measured by Spin Photocurrents,
Phys. Rev. B 75, 035327 (2007)(PDF).
W. Weber, J. Kiermeier, S.N. Danilov, D. Schuh, Ch. Gerl, W. Wegscheider, D. Bougeard, G. Abstreiter, W. Prettl, S.D. Ganichev,
Picosecond Polarization Detector for Infrared and Terahertz Radiation ,
Proc. MRS Spring Meeting, San Francisco, USA (2007).
W. Weber, S. Seidl, L.E. Golub, S.N. Danilov, V.V. Bel'kov, E.L. Ivchenko, W. Prettl, Z.D. Kvon, Hyun-Ick Cho and Jung-Hee Lee, S.D. Ganichev,
Rashba Spin-Splitting and Spin Currents in GaN Heterojunctions,
Proc. MRS Spring Meeting, San Francisco, USA (2007).

2006
S.D. Ganichev, V.V. Bel'kov, S.A. Tarasenko, S.N. Danilov, S. Giglberger, Ch. Hoffmann, E.L. Ivchenko, D. Weiss, W. Wegscheider, Ch. Gerl, D. Schuh, J. Stahl, J. De Boeck, G. Borghs, and W. Prettl,
Zero-bias spin separation
Nature Physics (London) 2, 609 (2006). (PDF)
V.A.Shalygin, H.Diehl, C. Hoffmann, S.N. Danilov, T. Herrle, S.A. Tarasenko, D.Schuh, Ch.Gerl, W. Wegscheider, W. Prettl and S.D. Ganichev,
Spin photocurrents and circular photon drag effect in (110)-grown quantum well structures,
JETP Lett. 84, 570 (2006) (PDF).
S.D. Ganichev, S.N. Danilov, Petra Schneider, V.V. Bel'kov, L.E. Golub, W. Wegscheider, D. Weiss, and W. Prettl,
Electric current induced spin orientation in quantum well structures
J. Magn. and Magn. Materials 300, 127-131 (2006).(PDF).
S.D. Ganichev, and W. Prettl,
Terahertz radiation induced spin photocurrents in non-magnetic low dimensional structures, review,
Acta Physica Polonica A 108, 581-608 (2006).
S.D. Ganichev, V.V. Bel'kov, S.A. Tarasenko, S.N. Danilov, S. Giglberger, Ch. Hoffmann, E.L. Ivchenko, D. Weiss, C. Gerl, D. Schuh, W. Wegscheider, and W. Prettl
Zero-Bias Spin Seperation in Quantum Wells,
Proc. 31th Int. Conf. IRMMW-THz: Physics and Technology, China (2006)
V.A. Shalygin, Ch. Hoffmann, S.N. Danilov, S.A. Tarasenko, E.L. Ivchenko, V.V. Bel'kov, D. Schuh, W. Wegscheider, and S.D. Ganichev,
Circular photon drag effect in (110)-grown GaAs quantum wells
Proc. 14th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, (2006).
W. Weber, S.D. Ganichev, Z.D. Kvon, V.V. Bel'kov, L.E. Golub, S.N. Danilov, S. Seidl, D. Weiss, W. Prettl, Hyun-Ick Cho, Jung-Hee Lee,
Demonstration of Rashba spin splitting in GaN-based heterostructures
Proc. 14th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, (2006).
S.D. Ganichev, V.V. Bel'kov, S.A. Tarasenko, S.N. Danilov, S. Giglberger, Ch. Hoffmann, E.L. Ivchenko, D. Weiss, C. Gerl, D. Schuh, W. Wegscheider, and W. Prettl,
Manifestation of pure spin currents induced by spindependent scattering processes
Proc. 14th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, (2006).

2005
W. Weber, S.D. Ganichev, Z.D. Kvon, V.V. Bel'kov, L.E. Golub, S.N. Danilov, D. Weiss, W. Prettl, Hyun-Ick Cho and Jung-Hee Lee
Demonstration of Rashba spin splitting in GaN-based heterostructures ,
Appl. Phys. Lett. 87, 262106 (2005)
cond-mat/0509208 (2005). (PDF)
V.V. Bel'kov, S.D. Ganichev, E.L. Ivchenko, S.A. Tarasenko, W. Weber, S. Giglberger, M. Olteanu, H.-P. Tranitz, S.N. Danilov, Petra Schneider, W. Wegscheider, D. Weiss andW. Prettl
Magneto-gyrotropic photogalvanic effects in semiconductor quantum wells ,
J. Phys. C: Condens. Matter 17, 3405 (2005)(PDF)
W. Weber, S.D. Ganichev, Z.D. Kvon, W. Prettl, Hyun-Ick Cho, and Jung-Hee Lee,
Infrared radiation induced spin photocurrents in GaN quantum well structures, 30th Int. Conf. of Infrared and Millimeter Waves, Williamsburg, IEEE 05EX1150, CD-ROM, pp. 66-67 (2005)
S.D. Ganichev, S.N. Danilov, V.V. Bel'kov, S. Giglberger, E.L. Ivchenko, S.A. Tarasenko, D. Weiss, W. Prettl, W. Jantsch, F. Schäffler, and D. Gruber,
Manifestation of pure spin currents induced by spin dependent electron phonon interaction, Proc. 30th Int. Conf. of Infrared and Millimeter Waves, IEEE 05EX1150, CD-ROM, pp. 221-222 (2005)
S.D. Ganichev, S.N. Danilov, Petra Schneider, V.V. Bel'kov, L.E. Golub, V.A. Shalygin, S. Giglberger, J. Stahl, W. Wegscheider, D. Weiss, W. Prettl,
Electric current induced spin orientation in quantum well structures
Proc. 13th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, (2005)
S. Giglberger, S.D. Ganichev, V.V. Bel'kov, M. Koch, T. Kleine-Ostmann, K. Pierz, E.L. Ivchenko, L.E. Golub, S.A. Tarasenko, W. Prettl,
Gate voltage controlled spin photocurrents in heterojunctions,
Proc. 13th Int. Symp. Nanostructures: Physics and Technology, St.Petersburg, Russia, (2005)
W. Weber, V.V. Bel'kov, S.D. Ganichev, E.L. Ivchenko, S.A. Tarasenko, S. Giglberger, M. Olteanu, H.-P. Tranitz, S.N. Danilov, Petra Schneider, W. Wegscheider, D. Weiss and
W. Prettl,
Magneto-Gyrotropic Photogalvanic Effects in Semiconductor Quantum Wells,
Proc. 13th Int. Symp. Nanostructures: Physics and Technology, St.Petersburg, Russia, (2005)
S.D. Ganichev, Petra Schneider, S. Giglberger, W. Wegscheider, D. Weiss, W. Prettl, V.V Bel'kov, L.E. Golub, and E.L. Ivchenko,
Experimental separation of Rashba and Dresselhaus spin-splittings in semiconductor quantum wells
Proc. 772 ICPS-27 772, 1309 (2005).

2004
S.D. Ganichev, S.N. Danilov, Petra Schneider, V.V. Bel'kov, L.E. Golub, W. Wegscheider, D. Weiss, W. Prettl,
Can an electric current orient spins in quantum wells?
cond-mat/0403641 (2004). (PDF)
Petra Schneider, J. Kainz, S.D. Ganichev, V.V. Bel'kov, S.N. Danilov, M.M. Glazov, L.E. Golub, U. Rössler, W. Wegscheider, D. Weiss, D. Schuh, and W. Prettl,
Spin relaxation times of 2D holes from spin sensitive bleaching of inter-subband absorption
J. Appl. Phys. 96, 420 (2004). (PDF)
S.D. Ganichev, V.V. Bel'kov, L.E. Golub, E.L. Ivchenko, Petra Schneider, S. Giglberger, J. Eroms, J. DeBoeck, G. Borghs, W. Wegscheider, D. Weiss, and W. Prettl,
Experimental Separation of Rashba and Dresselhaus spin-splittings in Semiconductor Quantum Wells,
Phys. Rev. Lett. 92, 256601 (2004). (PDF)
S. D. Ganichev,
The Infrared Spin-Galvanic Effect in Semiconductor Quantum Wells,
Physica E 20, 419 (2004). (PDF)
J. Kainz, Petra Schneider, S. D. Ganichev, U. Rössler, W. Wegscheider, D. Weiss, W. Prettl, V. V. Bel'kov, L. E. Golub, D. Schuh,
Hole Spin-Relaxation in Quantum Wells from Saturation of Inter-Subband Absorption,
Physica E 22, 418 (2004). (PDF)
S.D. Ganichev, V.V. Belkov, Petra Schneider, S. Giglberger, S.N. Danilov, W. Weber, M. Olteanu, and W. Prettl,
Spin-orbit coupling in gyrotropic quantum wells by far-infrared radiation induced spin-galvanic effect,
Eds. M. Thumm, and W. Wiesbeck, Conf. Proc. of 29th Int. Conf. of Infrared and Millimeter Waves, Karlsruhe, pp. 167-168 (2004).
S.D. Ganichev, V.V Bel'kov, Petra Schneider, S. Giglberger, Ch. Hoffmann, W. Prettl
Magneto-Gyrotropic Effect in Semiconductor Quantum Wells,
Eds. M. Thumm, and W. Wiesbeck, Conf. Proc. of 29th Int. Conf. of Infrared and Millimeter Waves, Karlsruhe, pp. 131-132 (2004).
S.D. Ganichev, Petra Schneider, V.V. Bel'kov, L.E. Golub, E.L. Ivchenko, S. Giglberger, J. Eroms, J. De Boeck, G. Borghs, W. Wegscheider, D. Weiss, and W. Prettl,
Experimental Separation of Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells,
Proc. 12th Int. Symp. Nanostructures: Physics and Technology,
St. Petersburg, Russia, (2004).
V.A. Shalygin, L.E. Vorobjev, D.A. Firsov, E. Towe, S.A. Gurevich, S.N. Danilov, and S.D. Ganichev,
Terahertz radiation induced intersubband transitions and photogalvanic effects in tunnel-coupled quantum wells,
Proc. 12th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, (2004).

2003
S. D. Ganichev,
Book chapter: Spin-galvanic effect and spin orientation induced circular photogalvanic effect in quantum well structures,
in series ''Advances in Solid State Physics'', B. Kramer (Ed.) (Springer-Verlag Berlin-Heidelberg), Vol. 43, pp. 427-442 (2003). (PDF)
V.V. Bel'kov, S.D. Ganichev, Petra Schneider, S. Giglberger, E.L. Ivchenko, S.A. Tarasenko, W. Wegscheider, D. Weiss, W.Prettl,
Magneto-Gyrotropic Photogalvanic Effect in Semiconductor Quantum Wells,
cond-mat/0311474 (2003).
V.V. Bel'kov, S.D. Ganichev, Petra Schneider, C. Back, M. Oestreich, J. Rudolph, D. Hägele, L.E. Golub, W. Wegscheider, W. Prettl,
Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells,
Solid State Communic. 128, 283 (2003). (PDF)
S.D. Ganichev, S.N. Danilov, M. Sollinger, J. Zimmermann, A.S. Moskalenko, V.I. Perel, I.N. Yassievich, C. Back and W. Prettl,
Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation,
Physica B 340-342, 1155 (2003). (PDF)
S. D. Ganichev, and W. Prettl,
Review: Spin photocurrents in quantum wells,
J. Phys.: Condens. Matter, 15, R935 (2003). (PDF)
S. D. Ganichev, I. N. Yassievich, and W. Prettl,
Tunneling processes induced by terahertz fields,
J. Biological Physics, 29, 327 (2003). (PDF)
S. D. Ganichev, Petra Schneider, V. V. Bel'kov, E. L. Ivchenko, S. A. Tarasenko, W. Wegscheider, D. Weiss, D. Schuh, D. G. Clarke, M. Merrick, B. N. Murdin, P. Murzyn, P. J. Phillips, C. R. Pidgeon, E. V. Beregulin, and W. Prettl,
Spin galvanic effect due to optical spin orientation,
Phys. Rev. B. Rapid Communic. 68, 081302 (2003). (PDF)
S. D. Ganichev, V. V. Bel'kov, Petra Schneider, E. L. Ivchenko, S. A. Tarasenko, D. Schuh, W. Wegscheider, D. Weiss, and W. Prettl,
Resonant inversion of circular photogalvanic effect in n-doped quantum wells,
Phys. Rev. B 68, 035319 (2003). (PDF)
S.D. Ganichev, H. Ketterl, and W. Prettl,
Fast room temperature detection of state of circular polarization of terahertz radiation,
Int. J. Infrared and Millimeter Waves 24, 847-853 (2003). (PDF)
Petra Schneider, S. D. Ganichev, J. Kainz, U. Rössler, W. Wegscheider, D. Weiss, W. Prettl, V. V. Bel'kov, L. E. Golub, and D. Schuh,
Spin-sensitive bleaching and spin relaxation in QW's
phys. stat. sol. (b) 238, 533 (2003). (PDF)
V. I. Perel', S. A. Tarasenko, I. N. Yassievich, S. D. Ganichev, V. V. Bel'kov, and W. Prettl,
Spin-dependent tunnelling through a symmetric barrier,
Phys. Rev. B. Rapid Communic. 67, R201304 (2003). (PDF)
S. D. Ganichev, E. L. Ivchenko, V. V. Bel'kov, S. A. Tarasenko, M. Sollinger, D. Schowalter, D. Weiss, W. Wegscheider, and W. Prettl,
Spin-galvanic effect in quantum wells,
J. Supercond.: Incorporating Novel Magn., 16, 369 (2003). (PDF)
S. A. Tarasenko, E. L. Ivchenko, V. V. Bel'kov, S. D. Ganichev, D. Schowalter, Petra Schneider, M. Sollinger, W. Prettl, V. M. Ustinov, A. E. Zhukov, and L. E. Vorobjev,
Optical spin orientation under inter- and intra-subband transitions in QWs
J. Supercond.: Incorporating Novel Magn. 16, 419 (2003). (PDF)
V. V. Bel'kov, S. D. Ganichev, Petra Schneider, D. Schowalter, U. Rössler, W. Prettl, E. L. Ivchenko, R. Neumann, K. Brunner, and G. Abstreiter,
Spin-photocurrent in p-SiGe quantum wells under terahertz laser irradiation,
J. Supercond.: Incorporating Novel Magn. 16, 415 (2003). (PDF)
S.D. Ganichev, S.N. Danilov, M. Sollinger, J. Zimmermann, A.S. Moskalenko, V.I. Perel, I.N. Yassievich, C. Back, and W. Prettl,
Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation,
Proc. of 28th Int. Conf. of Infrared and Millimeter Waves, ed. N. Hiromoto, Otsu, Shiga, Japan, W5-1 (2003).(PDF)
S. D. Ganichev, V. V. Bel'kov, Petra Schneider, E. L. Ivchenko, S. A. Tarasenko, W. Wegscheider, D. Weiss, D. Schuh, and W. Prettl,
Inversion of circular photogalvanic effect at resonance in n-doped quantum wells,
Proc. of 11th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, 267 (2003).
S. A. Tarasenko, V. I. Perel', I. N. Yassievich, S. D. Ganichev, V. V. Bel'kov, and W. Prettl,
Spin injection by electron tunnelling through a semiconductor barrier,
Proc. of 11th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, 281 (2003).
S. D. Ganichev, Petra Schneider, V. V. Bel'kov, J. Kainz, U. Rössler, L. E. Golub, D. Weiss, W. Wegscheider, D. Schuh, and W. Prettl,
Spin sensitive saturation of heavy-hole - light-hole absorption in p-type GaAs QWs,
Proc. of 11th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, 269 (2003).
S. D. Ganichev,
Spin photocurrents in quantum wells,
Proc. of 26th Int. Conf. on Phys. of Semiconductors (ICPS26) Vol. 171, eds. A.R. Long and J.H. Davies, (IOP, Bristol 2003), p. 277.
S.D. Ganichev,
Ionization of impurities in semiconductors by intense FIR radiation
Proc. SPIE 5024, 12 (2003).

2002
S. D. Ganichev, E. L. Ivchenko, V. V. Bel'kov, S. A. Tarasenko, M. Sollinger, D. Weiss, W. Wegscheider, and W. Prettl,
Spin-galvanic effect,
Nature (London) 417, 153 (2002). (PDF)
S. D. Ganichev, S. N. Danilov, V. V. Bel'kov, E. L. Ivchenko, M. Bichler, W. Wegscheider, D. Weiss, and W. Prettl,
Spin sensitive bleaching and monopolar spin orientation in quantum wells,
Phys. Rev. Lett. 88, 057401-1 (2002). (PDF)
S. D. Ganichev, I. N. Yassievich, and W. Prettl,
Review: Tunneling ionization of deep centers in terahertz electric fields,
J. Phys.: Condens. Matter 14, R1263 (2002). (PDF)
S. D. Ganichev, U. Rößler, W. Prettl, E. L. Ivchenko, V.V. Bel'kov, R. Neumann, K. Brunner, and G. Abstreiter,
Removal of spin degeneracy in p-SiGe quantum wells demonstrated by spin photocurrents,
Phys. Rev. B. 66, 075328 (2002). (PDF)
S. D. Ganichev, H. Ketterl, V. I. Perel, I. N. Yassievich, and W. Prettl,
Tunneling ionization of deep centers in high-frequency electric fields,
Phys. Rev. B. 65, 085203 (2002). (PDF)
S. D. Ganichev, E. L. Ivchenko, and W. Prettl,
Photogalvanic effects in quantum wells,
Physica E 14, 166 (2002). (PDF)
S. D. Ganichev, E. L. Ivchenko, S. N. Danilov, M. Sollinger, J. Eroms, W. Wegscheider, D. Weiss, and W. Prettl,
Transfer of spin orientation into electric current in quantum wells,
Physica E 13, 552 (2002). (PDF)
S. A. Tarasenko, E. L. Ivchenko, V. V. Bel'kov, S. D. Ganichev, D. Schowalter, Petra Schneider, M. Sollinger, W. Prettl, V. M. Ustinov, A. E. Zhukov, and L. E. Vorobjev,
Monopolar Optical Orientation of Electronic Spins in Semiconductors
(2002).(cond-mat/0301393). (PDF)
S. D. Ganichev, E. L. Ivchenko, and W. Prettl,
Spin dependent photocurrents in quantum well structures induced by FIR radiation,
Proc. of 26th Int. Conf. of Infrared and Millimeter Waves, eds. O. Portugal and J. Leotin, 4-19 (2002).(PDF)
S. A. Tarasenko, E. L. Ivchenko, V. V. Bel'kov, S. D. Ganichev, Petra Schneider, M. Sollinger, D. Schowalter, W. Prettl, V. M. Ustinov, A. E. Zhukov, and L. E. Vorobjev,
Monopolar optical orientation of electronic spins in semiconductors,
Proc. of 26th Int. Conf. on Phys. of Semiconductors (ICPS26), Vol. 171, eds. A.R. Long and J.H. Davies, (IOP, Bristol 2003) (cd).(PDF)
S. D. Ganichev,
Photogalvanic currents in quantum well structures induced by infrared radiation invited,
Proc. SPIE 5065, 85 (2002).
S. D. Ganichev,
Circular photogalvanic effects induced by spin orientation in quantum wells,
Proc. of 10th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia (2002).
S. D. Ganichev, U. Rössler, W. Prettl, E. L. Ivchenko, V. V. Bel'kov, R. Neumann, K. Brunner, and G. Abstreiter,
Removal of spin degeneracy in SiGe based nanostructures,
Proc. of 10th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, (2002) .(PDF)
S.D. Ganichev, U. Rössler, W. Prettl, E. L. Ivchenko, V. V. Bel'kov, R. Neumann, K. Brunner, and G. Abstreiter,
Removal of spin degeneracy in SiGe-based nanostructures
Proc. SPIE 5023, 169 (2002)

2001
S. D. Ganichev, S. N. Danilov, J. Eroms, W. Wegscheider, D. Weiss, W. Prettl, and E. L. Ivchenko,
Conversion of spin into directed electric current in quantum wells,
Phys. Rev. Lett. 86, 4358 (2001). (PDF)
S. D. Ganichev, H. Ketterl, W. Prettl, I. A. Merkulov, V. I. Perel, I. N. Yassievich, and A. V. Malyshev,
Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities,
Phys. Rev. B (Rapid Communic.) 63, 201204(R) (2001). (PDF)
S. D. Ganichev, S. N. Danilov, E. L. Ivchenko, H. Ketterl, L. E. Vorobjev, M. Bichler, W. Wegscheider, and W. Prettl,
Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in MQWs,
Physica E 10, 52 (2001). (PDF)
S. D. Ganichev, E. Ziemann, I. N. Yassievich, V. I. Perel, and W. Prettl,
Characterization of deep impurities in semiconductors by terahertz tunneling ionization,
Material Science in Semiconductors 4, 281 (2001).(PDF)
S. D. Ganichev, S. N. Danilov, M. Sollinger, D. Weiss, W. Wegscheider, W. Prettl, V. V. Bel'kov, and E. L. Ivchenko,
Monopolar spin orientation and determination of spin relaxation times in quantum well structures,
MRS Symp. Proc. 690, eds. T.J. Klemmer, J.S. Sun, A. Fert, and J. Bass, F1.2.1 (2001).(PDF)
S. D. Ganichev, U. Rössler, F.-P. Kalz, W. Prettl, R. Neumann, K. Brunner, G. Abstreiter, and E. L. Ivchenko,
Circular photogalvanic effect in Si/Ge semiconductor quantum wells,
MRS Symp. Proc. 690 eds. T.J. Klemmer, J.S. Sun, A. Fert, and J. Bass, F3.11.1 (2001).(PDF)
S. D. Ganichev, H. Ketterl, and W. Prettl,
Fast room temperature detection of state of circular polarization of terahertz radiation,
MRS Symp. Proc. 692 eds. E.D. Jones, M.O. Manasreh, K.D. Choquette, and D. Friedman, H4.3.1 (2001).(PDF)
S. D. Ganichev, S. N. Danilov, V. V. Bel'kov, E. L. Ivchenko, L. E. Vorobjev, W. Wegscheider, M. Bichler and W. Prettl,
Spin sensitive bleaching of absorption in p-type GaAs/AlGaAs QWs,
Proc. of 9th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, 277 (2001).(PDF)
S. D. Ganichev, V. V. Bel'kov, E. L. Ivchenko, S. A. Tarasenko, M. Sollinger, F.-P. Kalz, D. Weiss, J. Eroms, and W. Prettl,
Magnetic field induced circular photogalvanic effect in InAs quantum wells,
Proc. of 9th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, 252 (2001).(PDF)
S. D. Ganichev,
Terahertz spectroscopy of semiconductors at high excitation level,
in Advanced Optical Materials and Devices, Proc. SPIE 4318, eds. J. Gradauskas and S. Ashmontas, 140 (2001).
S. D. Ganichev, H. Ketterl, V. I. Perel, I. N. Yassievich, and W. Prettl,
High-frequency regime of electron tunneling,
Proc. of 25th Int. Conf. on Phys. of Semiconductors, N. Miura, and T. Ando (eds.), Springer-Verlag Berlin-Heidelberg, 2, 1435 (2001).(PDF)
V. Novák, V. V. Bel'kov, D. MacMathúna, S. D. Ganichev, and W. Prettl,
Self-organized electron density patterns in n-GaAs induced by microwaves,
Proc. of 25th Int. Conf. on Phys. of Semiconductors, N. Miura, and T. Ando (eds.), Springer-Verlag Berlin-Heidelberg, 1, 212 (2001).(PDF)
S. D. Ganichev, E. L. Ivchenko, H. Ketterl, L. E. Vorobjev, M. Bichler, W. Wegscheider, and W. Prettl,
Circular photogalvanic effect in p-GaAs/AlGaAs MQWs,
Proc. of 25th Int. Conf. on Phys. of Semiconductors, N. Miura, and T. Ando (eds.), Springer-Verlag Berlin-Heidelberg, 1, 719 (2001).(PDF)

2000
S. D. Ganichev, H. Ketterl, and W. Prettl,
Schneller Detektor für den Polarisationsgrad zirkular polarisierten Lichtes im Spektralbereich vom langwelligen Infrarot bis sichtbares Licht und eine Methode zur Analyse der Symmetrie und damit technischer Qualität von Quantentrögen basierend auf dem Photogalvanischen Effekt,
Patent AN 11397128 (2000).
S. D. Ganichev, E. L. Ivchenko, H. Ketterl, W. Prettl, and L. E. Vorobjev,
Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs MQW,
Appl. Phys. Lett. 77, 3146 (2000). (PDF)
V. V. Bel'kov, J. Hirschinger, D. Schowalter, F.-J. Niedernostheide,
S. D. Ganichev, W. Prettl, D. Mac Mathúna, and V. Novák,
Microwave induced patterns in n-GaAs,
Phys. Rev. B 61, 13698 (2000). (PDF)
S. D. Ganichev, E. Ziemann, I. N. Yassievich, W. Prettl, A. Istratov, and E. R. Weber,
Distinction between the Poole-Frenkel and tunneling models of electric field-stimulated carrier emission from deep levels in semiconductors,
Phys. Rev. B 61, 10361 (2000).(PDF)
E. Ziemann, S. D. Ganichev, I. N. Yassievich, V. I. Perel, and W. Prettl,
Characterization of deep impurities in semiconductors by terahertz tunneling ionization,
J. Appl. Phys. 87, 3843 (2000).(PDF)
A. Lohner, M. Huber, S. D. Ganichev, W. Prettl, and H. Niederdellmann,
Visible light emission due to resonant CO₂ excitation of dental hard tissue,
Int. J. of Infrared and Millimeter Waves 21, 407 (2000). (PDF)
E. Zepezauer, A. Kalbeck, S. D. Ganichev, W. Korzenietz, and W. Prettl,
Near-field induced FIR Josephson-detection by x-axis-oriented YBa₂Cu₃O_7-d -films,
Int. J. of Infrared and Millimeter Waves 21, 355 (2000).(PDF)

1999
S. D. Ganichev,
Ionization of impurities in semiconductors by intense FIR radiation,
in Optical Diagnostic of Materials and Devices for Opto-, Micro- and Quantum Electronics, S. V. Svechnikov and M. Y. Valakh (eds.), Proc. SPIE (2000).
V. V. Bel'kov, J. Hirschinger, F.-J. Niedernostheide,
S. D. Ganichev, W. Prettl, and V. Novák,
Pattern Formation in Semiconductors,
Nature (London) 397, 398 (1999). (PDF)
S. D. Ganichev,
Review: Tunnel ionization of deep impurities in semiconductors induced by terahertz electric fields,
Physica B 273-274, 737 (1999).(PDF)
A. Ya. Shul'man, S. D. Ganichev, E. M. Dizhur, I. N. Kotel'nikov, E. Zepezauer, and W. Prettl,
Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR radiation,
Physica B 272, 442 (1999).(PDF)
S. D. Ganichev, H. Ketterl, and W. Prettl,
Spin dependent terahertz nonlinearities in degenerated valence band,
Physica B 272, 464 (1999).(PDF)
A. Ya. Shul'man, S. D. Ganichev, I. N. Kotel'nikov, E. M. Dizhur, W. Prettl, A. B. Ormont, Yu. V. Fedorov, and W. Prettl,
Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition,
phys. stat. sol. a 175, 289 (1999).(PDF)
A. S. Moskalenko, S. D. Ganichev, V. I. Perel, and I. N. Yassievich,
Magnetic field effect on tunnel ionization of deep impurities by far-infrared radiation,
Physica B 273-274, 1007 (1999).(PDF)
H. Ketterl, E. Ziemann, S. D. Ganichev, A. Belyaev, S. Schmult, and W. Prettl,
Terahertz tunnel ionization of DX centers in AlGaAs:Te,
Physica B 273-274, 766 (1999).(PDF)
S. D. Ganichev,
Review: Excitation of deep defects by intense terahertz radiation,
Acta Physica Polonica A 96, 535 (1999).(PDF)
E. Ziemann, S. D. Ganichev, W. Prettl, A. Istratov, and E. R. Weber,
High field limitation of Poole-Frenkel emisson caused by tunneling,
in: Luminescent Materials, MRS Symp. Proc. 560, J. McKittrick, B. Di. Bartolo, and K. Mishra (eds.), 239 (1999).
S. D. Ganichev, E. Ziemann, H. Ketterl, W. Prettl, I. N. Yassievich, V. I. Perel, I. Wilke, and E. E. Haller,
Carrier tunneling in high-frequency electric fields,
Proc. of 24th Int. Conf. on Physics Semiconductors, ed. by D. Gershoni (World Scientific, Singapore), 225 (1999). (PDF)
A. Ya. Shul'man, I. N. Kotel'nikov, S. D. Ganichev, E. M. Dizhur, A. B. Ormont, E. Zepezauer, and W. Prettl,
Near field enhancement of photoresistive effect in n-GaAs tunnel Schottky junctions, Proc. of 24th Int. Conf. on Physics Semiconductors, ed. by D. Gershoni, CD-ROM, Th-P58 (1999).(PDF)

1998
A. Lohner, W. M. Huber, S. D. Ganichev, J. Diener, and W. Prettl,
Light emission of dental enamel after multiphoton excitation,
Infrared Phys. and Technology 39, 23 (1998).(PDF)
S. D. Ganichev, E. Ziemann, Th. Gleim, W. Prettl, I. N. Yassievich, V. I. Perel, I. Wilke, and E. E. Haller,
Carrier tunneling in high-frequency electric fields,
Phys. Rev. Lett. 80, 2409 (1998).(PDF)
S. D. Ganichev, E. Ziemann, I. N. Yassievich, K. Schmalz, and W. Prettl,
Characterization of deep impurities in semiconductors by terahertz tunnel ionization,
in: Defect and Impurity Engineered Semiconductors and Devices II, MRS Symp. Proc. 510, eds. S. Ashok, J. Chevallier, K. Sumino, B. L. Sopori, and W. Goetz, 595 (1998).
S. D. Ganichev, E. Ziemann, H. Ketterl, W. Prettl, I. N. Yassievich, and V. I. Perel,
Enhancement of tunnel ionization of deep impurities in semiconductors in a high frequency electric field of FIR laser radiation,
Proc. of 23th Int. Conf. of Infrared and Millimeter Waves, eds. T. J Parker, and S. R. P. Smith, Essex, UK, 62 (1998) .

1997
S. D. Ganichev, I. N. Yassievich, and W. Prettl,
Ionization of deep impurities by far-infrared radiation,
Phys. Solid State 39, 1703 (1997).(PDF)
S. D. Ganichev, I. N. Yassievich, W. Raab, E. Zepezauer, and W. Prettl,
Storage of electrons in shallow donor excited states of GaP:Te,
Phys. Rev. B (Rapid Communic.) 55, R9243 (1997).(PDF)
S. D. Ganichev,
Tunnel ionization of deep impurities by submillimeter radiation,
habilitation Thesis (A.F. Ioffe Physico-Technical Institute, St.Petersburg), pp. 1-240 (1997).
S. D. Ganichev, I. N. Yassievich, W. Raab, E. Zepezauer, and W. Prettl,
Long living shallow donor excited states and FIR-IR up-conversion in GaP:Te,
MRS Symp Proc., eds. J. Michel, T. Kennedy, K. Wada, K. Thonke, 465 (1997).
J. Diener, D. I. Kovalev, M. Ben-Chorin, S. D. Ganichev, G. Polisski, and F. Koch,
The recombination statistic of the visible photoluminescence of Si nanocrystalls,
MRS Symp. Proc., eds. R.W. Collins, P. M. Fauchet, I. Shimizu, and J.-C. Vial, 553 (1997).(PDF)

1996
S. D. Ganichev, I. N. Yassievich, and W. Prettl,
Tunnel ionization of deep impurities by far-infrared radiation,
Semiconductors Sci. and Technology 11, 679 (1996).(PDF)
I. N. Kotel'nikov, A. Ya. Shul'man, S. D. Ganichev, N. A. Varvanin, B. Mayerhofer, and W. Prettl,
Heating of two-dimensional electron gas and LO-phonons in delta-doped GaAs by far-infrared radiation,
Solid State Communic. 97, 827 (1996).(PDF)
S. D. Ganichev, A. Ya. Shul'man, I. N. Kotel'nikov, N. A. Mordovets, and W. Prettl,
Response of tunnel Schottky-barrier junction to radiation pressure of FIR radiation,
Int. J. of Infrared and Millimeter Waves 17, 1353 (1996).(PDF)
J. Diener, M. Ben-Chorin, D. I. Kovalev, S. D. Ganichev, and F. Koch,
Excitation of the porous silicon photoluminescence by a multiphoton vibronic process,
Thin Solid Films 276, 116 (1996).(PDF)
S. D. Ganichev,
Tunnel ionization of deep impurities by submillimeter radiation,
referat of habilitation Thesis (LIAF, St.Petersburg), pp. 1-40 (1996).
S. D. Ganichev, I. N. Yassievich, and W. Prettl,
Adiabatic potentials configuration of deep impurities distinguished by phonon assisted tunneling in FIR radiation fields,
Proc. of 23th Int. Conf. on Physics of Semiconductors 3, ed. by M. Scheffler and R.Zimmerman (World Scientific, Singapore), 2785 (1996).(PDF)
S. D. Ganichev, I. N. Yassievich, and W. Prettl,
Tunnel ionization of deep impurities in semiconductors by intense FIR radiation,
Proc. of 21th Int. Conf. of Infrared and Millimeter Waves, ed. by M. v. Ortenberg and H.-U. Mueller (Humboldt-Universitaet zu Berlin), CM7 (1996).
S. D. Ganichev, I. N. Yassievich, W. Raab, E. Zepezauer, and W. Prettl,
Recombination kinetic in GaP:Te investigated by phonon assisted tunneling in FIR fields,
Proc. of 21th Int. Conf. of Infrared and Millimeter Waves, Proc., ed. by M. v. Ortenberg and H.-U. Mueller (Humboldt-Universitaet zu Berlin), CF2 (1996).(PDF)

1995
I. N. Kotel'nikov, A. Ya. Shul'man, N. A. Varvanin, S. D. Ganichev, B. Mayerhofer, and W. Prettl,
Photoresistive effect in in delta-doped GaAs/metal tunnel junctions,
JETP Lett. 62, 53 (1995).(PDF)
J. Diener, M. Ben-Chorin, D. I. Kovalev, S. D. Ganichev, and F. Koch,
Light from Porous Silicon by Multiphoton Vibronic Excitation,
Phys. Rev. B (Rapid Communic.) 52, R8617 (1995).(PDF)
E. V. Beregulin, and S. D. Ganichev,
Intraband photoconductivity,
Physics Encyclopedia 5, ed. by A. M. Prochorov (Scientific Edition of the Large Russian Encyclopedia), p. 355-357 Moscow (1995).
S. D. Ganichev, J. Diener, I. N. Yassievich, and W. Prettl,
Poole-Frenkel Effect in Terahertz Electromagnetic Fields,
Europhys. Lett. 29, 315 (1995).(PDF)
I. N. Kotel'nikov, A. Ya. Shul'man, N. A. Mordovets,
S. D. Ganichev, and W. Prettl,
Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs,
J. Phys. of Low Dim. Structures 12, 133 (1995).(PDF)
S. D. Ganichev, B. Mayerhofer, J. Diener, I. N. Yassievich, and W. Prettl,
Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields,
Material Science Forum 196-201, 1543 (1995).(PDF)
S. D. Ganichev, J. Diener, I. N. Yassievich, W. Prettl, B. K. Meyer and K. W. Benz,
Direct experimental evidence of autolocalization nature of DX- centers,
Material Science Forum 196-201, 1079 (1995).(PDF)
S. D. Ganichev, J. Diener, I. N. Yassievich, W. Prettl, B. K. Meyer and K. W. Benz,
Tunnelling ionization of autolocalized DX- centers in terahertz fields,
Phys. Rev. Lett. 75, 1590 (1995).(PDF)
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, G. M. Gusev, Z. D. Kvon, M. Yu. Martisov, A. Ya. Shik, and I. D. Yaroshetskii,
Rapid submillimeter photoconductivity and energy relaxation of a two-dimensional electron gas near the surface of silicon,
in the book Best of Soviet Semiconductor Physics and Technology (1989-1990), ed. by M. Levinstein and M. Shur (World Scientific, Singapore), 382 (1995).
S. D. Ganichev, K. Yu. Gloukh, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and I. D. Yaroshetskii,
Fast point detector of submillimeter radiation,
in the book Best of Soviet Semiconductor Physics and Technology (1989-1990), ed. by M. Levinstein and M. Shur (World Scientific, Singapore), 567 (1995).
I. N. Kotel'nikov, A. Ya. Shul'man, N. A. Mordovets, N. A. Varvanin,
S. D. Ganichev, B. Mayerhofer, and W. Prettl,
Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs,
Proc. of Int. Semiconductor Device Research Symposium 1, 99 (1995).(PDF)
S. D. Ganichev, and W. Prettl,
Adiabatic potentials distinguished by tunneling in FIR radiation fields,
Digest of 20th Int. Conf. of Infrared and Millimeter Waves, ed. by R. J. Temkin, 315 (1995).(PDF)
I. N. Kotel'nikov, A. Ya. Shul'man, S. D. Ganichev, N. A. Varvanin, B. Mayerhofer, and W. Prettl,
Non-thermal effect of FIR radiation on tunnel conductance of Schottky-barrier junctions with three- and two-dimensional electron gas,
Digest of 20th Int. Conf. of Infrared and Millimeter Waves, ed. by R. J. Temkin, Orlando, USA, 391 (1995).(PDF)
J. Diener, S. D. Ganichev, M. Ben-Chorin, V. Petrova-Koch, and F. Koch,
Luminescence quenching and recovery in porous Si after pulse infrared irradiation,
MRS Symp. Proc. 358, ed. by R. W. Collins, A. C. Tsai, M. Hirose, F. Koch, and L. Brus, 501 (1995).(PDF)
S. D. Ganichev, and W. Prettl,
Tunnel ionization of deep impurities in the electric field of far-infrared radiation,
Proc. of 22th Int. Conf. on Physics of Semiconductors 3, ed. by D. J. Lockwood (World Scientific, Singapore), 2189 (1995).

1994
S. D. Ganichev, J. Diener, and W. Prettl,
Nonlinear far-infrared absorption in InSb at light impact ionization,
Appl. Phys. Lett. 64, 1977 (1994).(PDF)
S. D. Ganichev, J. Diener, and W. Prettl,
Direct tunnel ionization of deep impurities in the electric field of far-infrared radiation,
Solid State Communic. 92, 883 (1994).(PDF)
S. D. Ganichev and W. Prettl,
Nonlinear far-infrared absorbtion in InSb due to the light impact ionization,
Digest of 19th Int. Conf. of Infrared and Millimeter Waves, ed. by K. Sakai and T. Yoneyama, 129 (1994).(PDF)
S. D. Ganichev, and W. Prettl,
Terahertz tunnel ionization in semiconductors,
Digest of 19th Int. Conf. of Infrared and Millimeter Waves, ed. by K. Sakai and T. Yoneyama, 133 (1994).
S. D. Ganichev, W. Prettl, and P. G. Huggard,
The FIR tunnel ionization of deep impurities in semiconductors,
Proc. SPIE 2250, ed. by M. N. Afsar, 458 (1994).

1993
S. D. Ganichev, W. Prettl, and P. G. Huggard,
Phonon assisted tunnel ionization of deep impurities in the electric field of far-infrared radiation,
Phys. Rev. Lett. 71, 3882 (1993).(PDF)
S. D. Ganichev, E. L. Ivchenko, R. Ya. Rasulov, I. D. Yaroshetskii, and B. Ya. Averbukh,
Linear-circular dichroism of photon drag effect at nonlinear intersubband absorption of light in p-type Ge,
Phys. Solid State 35, 104 (1993).(PDF)
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, Yu. B. Lyanda-Geller, and I. D. Yaroshetskii,
Linear photogalvanic effect in p-type GaSb at infrared and submillimeter wavelengths,
Phys. Solid State 35, 238 (1993).(PDF)
E. V. Beregulin, S. D. Ganichev, and I. D. Yaroshetskii,
Room temperature high sensitive fast detector of FIR radiation,
Proc. SPIE 1985, ed. by F. Bertran and E. Gornik, 523 (1993).(PDF)
S. D. Ganichev, K. Yu. Gloukh, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and I. D. Yaroshetskii,
New fast point detector of FIR radiation,
Proc. SPIE 1985, ed. by F. Bertran and E. Gornik, 526 (1993).(PDF)
S. D. Ganichev, E. L. Ivchenko, R. Ya. Rasulov, I. D. Yaroshetskii, and B. Ya. Averbukh,
FIR multiphoton absorption and photon drag effect in semiconductors with degenerate valence band,
Proc. SPIE 2140, ed. by J. R. Birch and T. J. Parker, 220 (1993).(PDF)
S. D. Ganichev, K. Yu. Gloukh, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and I. D. Yaroshetskii,
Tunneling in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light,
Sov. Phys. JETP 75, 495 (1992).(PDF)
E. V. Beregulin, S. D. Ganichev, I. D. Yaroshetskii, P. T. Lang, W. Schatz, and K. F. Renk,
Generation of intense short FIR pulses by use of a passively mode-locked high- pressure CO₂ laser as a pump source,
Proc. SPIE 1576, ed by M. R. Siegrist, M. Q. Tran and T. M. Tran, 100 (1991).(PDF)

1990
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, G. M. Gusev, Z. D. Kvon, M. Yu. Martisov, A. Ya. Shik, and I. D. Yaroshetskii,
Rapid submillimeter photoconductivity and energy relaxation of a two-dimensional electron gas near the surface of silicon,
Sov. Phys. JETP 70, 1138 (1990).(PDF)
P. T. Lang, W. Schatz, K. F. Renk, E. V. Beregulin, S. D. Ganichev, and I. D. Yaroshetskii,
Generation of far-infrared pulses by use of a passively mode-locked high-pressure CO₂ laser,
Int. J. of Infrared and Millimeter Wave 11, 851 (1990).(PDF)
E. V. Beregulin, S. D. Ganichev, I. D. Yaroshetskii, P. T. Lang, W. Schatz, and K. F. Renk,
Devices for generation and detection of subnanosecond IR and FIR radiation pulses,
Proc. SPIE 1362-2, ed by M. Razeghi, 853 (1990).(PDF)

1989
S. D. Ganichev, S. A. Emel'yanov, Ya. V. Terent'ev, and I. D. Yaroshetskii,
On the domain of application of fast submillimeter detectors cooled to T=77 K,
Sov. J. Tech. Phys. 34, 565 (1989).(PDF)
S. D. Ganichev, K. Yu. Gloukh, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and I. D. Yaroshetskii,
Fast point detector of submillimeter radiation,
Sov. J. Tech. Phys. Lett. 15, 290 (1989).(PDF)
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, Yu. B. Lyanda -Geller, and I. D. Yaroshetskii,
Linear photogalvanic effect in gallium arsenide in submillimeter region,
J. Crystal Properties Preparation 19-20, 327 (1989).(PDF)
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, Yu. B. Lyanda -Geller, and I. D. Yaroshetskii,
Linear photogalvanic effect in p-GaAs in the classical region of frequency,
Sov. Phys. Solid State 31, 63 (1989).(PDF)
S. D. Ganichev, A. P. Dmitriev, S. A. Emel'yanov, Ya. V. Terent'ev, I. D. Yaroshetskii, and I. N. Yassievich,
Light impact ionization in semiconductors,
Proc. of 19th Int. Conf. on the Physics of Semiconductors 1, ed. by W. Zawadskii, 1373 (1989).(PDF)
S. D. Ganichev, K. Yu. Gloukh, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and I. D. Yaroshetskii,
Tunneling in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light,
Proc. of 19th Int. Conf. on the Physics of Semiconductors 1, ed. by W. Zawadskii, 699 (1989).(PDF)
A. V. Andrianov, E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, and I. D. Yaroshetskii,
Fast detector for the polarization characteristics determination of the pulse IR-FIR laser radiation,
Proc. of Int. Conf. on Millimeter Wave and Far Infrared Technology, ed. by A. S. McMillan and G. M. Tucker ( Pergamon Press, Oxford), 165 (1989).(PDF)
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, I. D. Yaroshetskii and I. N. Yassievich,
Saturation absorption in p-Ge of IR-FIR radiation and its technical utilization,
Proc. of Int. Conf. on Millimeter Wave and Far Infrared Technology, ed. by A. S. McMillan and G. M. Tucker ( Pergamon Press, Oxford), 597 (1989).(PDF)
S. D. Ganichev, K. Yu. Gloukh, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and I. D. Yaroshetskii,
Fast detector for far-IR laser beams on the Schottky-barrier tunnel diodes,
Proc. of Int. Conf. on Millimeter Wave and Far Infrared Technology, Proc., ed. by A. S. McMillan and G. M. Tucker ( Pergamon Press, Oxford), 155 (1989).(PDF)
E. V. Beregulin, S. D. Ganichev, and I. D. Yaroshetskii,
Fast uncooled detector of the IR-FIR radiation on the base of intraband photoconductivity,
Proc. of Int. Conf. on Millimeter Wave and Far Infrared Technology, ed. by A. S. McMillan and G. M. Tucker ( Pergamon Press, Oxford), 160 (1989).(PDF)

1988
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, G. M. Gusev, Z. D. Kvon, M. Yu. Martisov, A. Ya. Shik, and I. D. Yaroshetskii,
Submillimeter photoconductivity in inversion layers at a silicon surface,
Sov. Phys. JETP Lett. 48, 269 (1988).(PDF)
A. V. Andrianov, E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, and I. D. Yaroshetskii,
Fast device for measuring polarization characteristics of submillimeter and IR laser pulses,
Sov. Tech. Phys. Lett. 14, 580 (1988).(PDF)
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, Yu. B. Lyanda-Geller, and I. D. Yaroshetskii,
Linear photogalvanic effect in the submillimeter spectral range,
Sov. Phys. Solid State 30, 418 (1988).(PDF)
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, Yu. B. Lyanda-Geller, and I. D. Yaroshetskii,
Linear photovoltaic effect in gallium arsenide in submillimeter region,
Proc. of 3rd Int. Conf. on Physics and Technology of GaAs and other A₃-B₅ Semiconductors, (Trans. Tech. Publ., Switzerland), 327 (1988).

1987
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, and I. D. Yaroshetskii,
Nonlinear absorption of submillimeter radiation in germanium due to optical heating of charge carriers,
Sov. Phys. Semicond. 21, 615 (1987).(PDF)
S. D. Ganichev, S. A. Emel'yanov, and I. D. Yaroshetskii,
Intraband photoconductivity due to light holes and heating of carriers in p-type Ge by submillimeter laser excitation,
Sov. Phys. Semicond. 21, 618 (1987).(PDF)
S. D. Ganichev, V. I. Pogodin, A. S. Ryvkin, and I. D. Yaroshetskii,
Detector of IR radiation,
Sov. patent N. 1414239, issued 25.06.87 (1987).

1986
S. D. Ganichev, A. P. Dmitriev, S. A. Emel'yanov, Ya. V. Terent'ev, I. D. Yaroshetskii, and I. N. Yassievich,
Impact ionization in semiconductors under the influence of the electric field of an optical wave,
Sov. Phys. JETP 63, 256 (1986).(PDF)
S. D. Ganichev, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and I. D. Yaroshetskii,
Photoresistive effect in n-GaAs/Au tunnel junctions during plasma reflection of laser light,
Sov. Phys. JETP Lett. 44, 301 (1986).(PDF)
S. D. Ganichev, S. A. Emel'yanov, E. L. Ivchenko, E. Yu. Perlin, Ya. V. Terent'ev, A. V. Fedorov, and I. D. Yaroshetskii,
Multiphoton absorption in semiconductors at submillimeter wavelengths,
Sov. Phys. JETP 64, 729 (1986).(PDF)
E. V. Beregulin, S. D. Ganichev, and I. D. Yaroshetskii,
Nonlinear absorption of CO₂ laser radiation in p-germanium,
Sov. Phys. Semicond. 20, 745 (1986).(PDF)

1985
S. D. Ganichev, Ya. V. Terent'ev, and I. D. Yaroshetskii,
Photon-drag photodetectors for the far-IR and submillimeter regions,
Sov. Tech. Phys. Lett. 11, 20 (1985).(PDF)
S. D. Ganichev, S. A. Emel'yanov, A. G. Pakhomov, Ya. V. Terent'ev, and I. D. Yaroshetskii,
Fast uncooled detector for far-IR and submillimeter laser beams,
Sov. Tech. Phys. Lett. 11, 377 (1985).(PDF)

1984
S. D. Ganichev, A. P. Dmitriev, S. A. Emel'yanov, Ya. V. Terent'ev, I. D. Yaroshetskii, and I. N. Yassievich,
Impact ionization in a semiconductor in a light wave,
Sov. Phys. JETP Lett. 40, 948 (1984).(PDF)
S. D. Ganichev, S. A. Emel'yanov, Ya. V. Terent'ev, and I. D. Yaroshetskii,
Drag of carriers by photons under conditions of multiphoton absorption of submillimeter radiation in p-type germanium,
Sov. Phys. Semicond. 18, 164 (1984).(PDF)
S. D. Ganichev,
Investigation of non-equilibrium and non-linear phenomena in germanium at excitation by FIR laser radiation,
PhD Thesis (A.F. Ioffe Physico-Technical Institute, Leningrad), pp. 1-155 (1984).

1983
S. D. Ganichev, S. A. Emel'yanov, E. L. Ivchenko, E. Yu. Perlin, and I. D. Yaroshetskii,
Multiphoton absorption in p-Ge in the submillimeter range,
Sov. Phys. JETP Lett. 37, 901 (1983).(PDF)
S. D. Ganichev, S. A. Emel'yanov, and I. D. Yaroshetskii,
Dynamic change in the photoconductivity sign in n-Ge in intense submillimeter radiation,
Sov. Phys. JETP Lett. 38, 448 (1983).(PDF)
S. D. Ganichev, S. A. Emel'yanov, and I. D. Yaroshetskii,
Drag of carriers by photons in semiconductors in the far infrared and submillimeter spectral ranges,
Sov. Phys. Semicond. 17, 436 (1983).(PDF)
S. D. Ganichev,
Investigation of non-equilibrium and non-linear phenomena in germanium at excitation by FIR laser radiation,
referat of PhD Thesis (LIAF, Leningrad), pp. 1-35 (1983).

1982
E. V. Beregulin, P. M. Valov, S. D. Ganichev, Z. N. Kabakova, and I. D. Yaroshetskii,
Low-voltage device for passive mode locking of pulsed infrared lasers,
Sov. J. Quantum Electron. 12, 175 (1982).(PDF)
E. V. Beregulin, S. D. Ganichev, I. D. Yaroshetskii, and I. N. Yassievich,
Mechanisms of energy relaxation under conditions of nonlinear absorption of light in p- type Ge,
Sov. Phys. Semicond. 16, 179 (1982).(PDF)

S. D. Ganichev, S. A. Emel'yanov, and I. D. Yaroshetskii,
Spectral sign inversion of photon drag at far-IR wavelengths,
Sov. Phys. JETP Lett. 35, 368 (1982).(PDF)

Contributions to conferences

top

2011

S. Stachel, P. Olbrich, T. Stangl, C. Karl, V. V. Bel'kov, S. V. Ivanov, A. N. Semenov, S. K. Clowes, T. Ashley, and S. D. Ganichev,
Magnetogyrotropic Photogalvanic Effects in InSb-based Low-Dimensional Structures,
15th International Conference on Narrow Gap Systems (NGS15), Blacksburg, Virginia (2011)
S. Stachel, T. Stangl, C. Karl, P. Olbrich, V. V. Bel'kov, S. K. Clowes, T. Ashley, and S. D. Ganichev,
Magnetogyrotropic Photogalvanic Effects in InSb-based quantum wells,
DPG-Frühjahrstagung, Dresden, Germany (2011)
C. Zoth, P. Olbrich, V. Bel'kov, Y. Terent'ev, C. Drexler, P. Lutz, D. Vogel, U. Wurstbauer, D. Schuh, D. Weiss, and S. D. Ganichev,
THz induzierte Spin-Photoströme in verdünnten magnetischen HL Heterostrukturen,
Fünftes THz-Frischlinge-Meeting, Regensburg (2011)
C. Zoth, P. Olbrich, V. Bel'kov, Y. Terent'ev, C. Drexler, V. Lechner, D. Vogel, U. Wurstbauer, D. Schuh, D. Weiss, and S. D. Ganichev,
Spin polarized currents in InAs based DMS structures,
2nd workshop of the joint JST-DFG workgroup on Topotronics, Tokyo, Japan (2011)
S. D. Ganichev, J. Karch, C. Drexler, M. Hirmer, M. Fehrenbacher, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, J. Eroms, B. Birkner, R. Yakimova, S. Lara-Avila, S. Kubatkin, M. Ostler, T. Seyller, and P. Olbrich
Vortex-like edge photocurrents induced by terahertz radiation in graphene
Material Research Society (MRS) Fall Meeting and Exhibit 2011, Boston, Massachusetts (2011)
V. Lechner, L. E. Golub, F. Lomakina, V. V. Bel'kov, P. Olbrich, S. Stachel, I. Caspers, M. Griesbeck, M. Kugler, M. J. Hirmer, T. Korn, C. Schüller, D. Schuh, W. Wegscheider, and S. D. Ganichev
Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effect
Spintech VI, Matsue, Japan (2011)
V. Lechner, L. E. Golub, F. Lomakina, V. V. Bel'kov, P. Olbrich, S. Stachel, I. Caspers, M. Griesbeck, M. Kugler, M. J. Hirmer, T. Korn, C. Schüller, D. Schuh, W. Wegscheider, and S. D. Ganichev
Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effect in GaAs/AlGaAs quantum wells
Beitrag zur DPG Frühjahrstagung, Regensburg (2011)
J. Karch, C. Drexler, P. Olbrich, C. Zoth, M. Fehrenbacher, Chongyun Jiang, V. A. Shalygin, S. N. Danilov, V. Yu. Panevin, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, J. Eroms, R. Yakimova, S. Lara-Avila, S. Kubatkin, and S. D. Ganichev
Photon helicity driven electric currents in graphene
Int. Workshop on Graphene Nanostructures, Regensburg (2011)
J. Karch, S. A. Tarasenko, E. L. Ivchenko, J. Kamann, P. Olbrich, M. Utz, Z. D. Kvon, and S. D. Ganichev
Observation of Pure Valley-Orbit Currents in (111)-oriented Silicon Structures
19th Int. Conf. Electronic Properties Two-Dimensional Systems (EP2DS 19), Tallahassee, Florida (2011)
J. Karch, P. Olbrich, M. Schmalzbauer, C. Zoth, C. Brinsteiner, M. Fehrenbacher, U. Wurstbauer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, J. Eroms, R. Yakimova, S. Lara-Avila, S. Kubatkin, and S. D. Ganichev
Photon helicity driven electric currents in graphene
15th Int. Conf. on Modulated Semiconductor Structures (MSS 15), Tallahassee, Florida (2011)
J. Karch, C. Drexler, P. Olbrich, M. Fehrenbacher, C. Zoth, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, J. Eroms, R. Yakimova, S. Lara-Avila, S. Kubatkin, and S. D. Ganichev
Photon Helicity Driven Electric Currents in Graphene
Fünftes THz-Frischlinge-Meeting, Regensburg (2011)
J. Karch, P. Olbrich, M. Schmalzbauer, C. Zoth, C. Brinsteiner, M. Fehrenbacher, U. Wurstbauer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, J. Eroms, R. Yakimova, S. Lara-Avila, S. Kubatkin, and S. D. Ganichev
Dynamic Hall effect driven by circularly polarized light in graphene
DPG Frühjahrstagung, Dresden (2011)

2010
S. Stachel, C. Karl, T. Stangl, P. Olbrich, V. V. Bel'kov, S. K. Clowes, T. Ashley, and S. D. Ganichev
Magnetogyrotropic Photogalvanic Effects in InSb-based low-dimensional structures
School and Conference on Spin-based quantum information processing, Konstanz, Germany (2010)
S. Stachel, V. Lechner, F. Lomakina, P. Olbrich, L. E. Golub, V. V. Bel'kov, S. A. Tarasenko, M. Griesbeck, M. Kugler, D. Waller, T. Korn, D. Schuh, C. Schüller, and S. D. Ganichev
Landé factor engineering and origin of magneto-gyrotropic photogalvanic effect in GaAs quantum wells
The 6th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VI), Tokyo, Japan (2010)
S. Stachel, C. Karl, T. Stangl, P. Olbrich, V. V. Bel'kov, S. K. Clowes, T. Ashley and S. D. Ganichev
Magnetogyrotropic Photogalvanic Effects in InSb-based low-dimensional structures
4. THz-Frischlinge-Konferenz, Wien, Austria (2010)
J. Karch, P. Olbrich, E. L. Ivchenko, J. Kamann, R. Ravash, T. Feil, S. N. Danilov, J. Allerdings, D. Weiss, D. Schuh, W. Wegscheider, and S. D. Ganichev
Ratchet effects induced by terahertz radiation in heterostructures with a lateral periodic potential
16th Int. Conf. on Superlattices, Nanostructures and Nanodevices (ICSNN 16), Beijing, China (2010)
S. D. Ganichev, J. Karch, P. Olbrich, M. Schmalzbauer, C. Zoth, C. Brinsteiner, U. Wurstbauer, M. M. Glazov, S. A. Tarasenko, D. Weiss, J. Eroms, R. Yakimova, S. Lara-Avila, S. Kubatkin, and E. L. Ivchenko
Photon helicity driven currents in graphene
30th Int. Conf. on the Physics of Semiconductors (ICPS 30), Seoul, Korea (2010)
V. Lechner, F. Lomakina, S. Stachel, L. E. Golub, V. V. Bel'kov, S. A. Tarasenko, M. Griesbeck, M. Kugler, D. Waller, T. Korn, D. Schuh, W. Wegscheider, D. Weiss and S. D. Ganichev
Lande factor engineering and origin of magneto-gyrotropic photogalvanic effect in GaAs quantum wells
18th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia (2010)
V. Lechner, F. Lomakina, S. Stachel, P. Olbrich, L. E. Golub, V. V. Bel'kov, M. Griesbeck, M. Kugler, D. Waller, T. Korn, C. Schüller, D. Schuh, W. Wegscheider and S. D. Ganichev
Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effect
School and Conference on Spin-based quantum information processing, Konstanz (2010)
V. Lechner, F. Lomakina, S. Stachel, P. Olbrich, L. E. Golub, V. V. Bel'kov, M. Griesbeck, M. Kugler, D. Waller, T. Korn, C. Schüller, D. Schuh, W. Wegscheider and S. D. Ganichev
Distinguishing between spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effect
Viertes THz-Frischlinge-Meeting, Wien (2010)
V. Lechner, S. Stachel, P. Olbrich, L. E. Golub, D. Schuh, W. Wegscheider, V. V. Bel'kov, S. D. Ganichev
Tuning of Structure Inversion Asymmetry (SIA) by the delta-Doping Position in (001)-Grown GaAs Quantum Wells (QW)
Beitrag zur DPG Frühjahrstagung, Regensburg (2010)
J. Karch, P. Olbrich, M. Schmalzbauer, C. Zoth, Ch. Brinsteiner, M. Fehrenbacher, U. Wurstbauer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, J. Eroms, R. Yakimova, S. Lara-Avila, S. Kubatkin, and S. D. Ganichev
Photon helicity driven current in graphene
1st Workshop of GK 1570: Electronic Properties of Carbon Based Nanostructures, St. Englmar (2010)
J. Karch, P. Olbrich, M. Schmalzbauer, C. Zoth, C. Brinsteiner, U. Wurstbauer, M. M. Glazov, S. A. Tarasenko, D. Weiss, J. Eroms, R. Yakimova, S. Lara-Avila, S. Kubatkin, E. L. Ivchenko, and S. D. Ganichev
Photon Helicity Driven Electric Currents in Graphene
Viertes THz-Frischlinge-Meeting, Wien (2010)
J. Karch, P. Olbrich, M. Schmalzbauer, Ch. Brinsteiner, J. Eroms, U. Wurstbauer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, and S. D. Ganichev
Photon helicity driven electric currents in graphene
Frühjahrstagung, Regensburg (2010)
J. Karch, P. Olbrich, J. Kamann, R. Ravash, T. Feil, S. N. Danilov, J. Allerdings, D. Schuh, W. Wegscheider, D. Weiss, E. L. Ivchenko, and S.D. Ganichev
Photocurrents in Lateral Superlattices. Ratchet Experiments
1st Workshop of the German-Russian THz Center: Terahertz Radiation Induced Photocurrents, Regensburg (2010)
J. Karch, S. A. Tarasenko, P. Olbrich, J. Kamann, T. Schönberger, C. Reitmaier, D. Plohmann, Z. D. Kvon, and S. D. Ganichev
Photogalvanic effects due to quantum interference in optical transitions and MPGE caused by orbital mechanisms in Si-MOSFETs
1st Workshop of the German-Russian THz Center: Terahertz Radiation Induced Photocurrents, Regensburg (2010)

2009
S.D. Ganichev
Zero-bias spin separation, invited
March Meeting of the American Physical Society, Pittsburg (2009)
S.D. Ganichev
Zero-bias spin separation and spin photocurrents in semiconductor low-dimensional structures, invited
14th Int. Conf. on Narrow Gap Semiconductors (2009)
S.D. Ganichev
All-electric detection of the radiation ellipticity of THz radiation, invited
Advanced Research Workshop Meso 09 ''Non-equilibrium and coherent phenomena at nanoscale'', Fifth Conference in the Series ''Mesoscopic and Strongly Correlated Electron Systems'', Chernogolovka (2009).
S.D. Ganichev
Intense terahertz excitation of semiconductors, invited
Jahrestagung des Deutschen Terahertzzentrums ''Leistungsstarke Laserpulse: Erzeugung und Anwendungen'' Berlin (2009).
S.D. Ganichev
Spin currents in diluted magnetic semiconductors, invited
14th International Conference on II-VI Compounds, St. Petersburg (2009).
S.D. Ganichev
All electical detection of the of the Stokes parameters of infrared/terahertz radiation, invited
E-MRS 2009 Fall Meeting, Warsaw (2009).
S. A. Tarasenko, S. D. Ganichev, V. V. Bel'kov, P. Olbrich, W. Eder, D. R. Yakovlev, V. Kolkovsky, W. Zaleszczyk, G. Karczewski, T. Wojtowicz, and D. Weiss
Spin Currents in Magnetic Semiconductor Quantum Wells,
International Conference On Magnetism (ICM), Karlsruhe (2009).
D.R. Khokhlov, A.B. Galeeva, L.I. Ryabova, A.V. Nicorici, S.D. Ganichev, S.D. Danilov, and V.V Bel'kov,
Magnetophotogalvanic effect in Pb_{1-x}Sn_xTe(In) at the excitation by powerfull terahertz laser radiation,
XIII Symp. Nanophysics and Nanoelectronics, Nijnii Novgorod, Russia (2009)
D.A. Firsov, L.E. Vorobjev, V.A. Shalygin, A.N. Sofonov, V.Yu. Panevin, M.Ya. Vinnichenko, S.D. Ganichev, and S.N. Danilov
Absorption and modulation of radiation in p-GaAs/AlGaAs quantum well nanostructures,
XIII Symp. Nanophysics and Nanoelectronics, Nijnii Novgorod, Russia (2009)
V. Lechner, P. Olbrich, S. Stachel, D. Schuh, W. Wegscheider, D. Weiss, V. V. Bel'kov, L. E. Golub, S. A. Tarasenko, and S. D. Ganichev
Manipulation of the Structure Inversion Asymmetry of Quantum Wells by Shifting the Position of the delta-doping Layer
16th International Conference on the Electron Dynamics In Semiconductors, Optoelectronics, and Nanostructures (EDISON 16), Montpellier, France (2009)
V. Lechner, S. D. Ganichev, V. V. Bel'kov, P. Olbrich, S. Stachel, L. E. Golub, S. A. Tarasenko, D. Schuh, W. Wegscheider, and D. Weiss
Manipulation of the Structure Inversion Asymmetry of Quantum Wells by Shifting the Position of the delta-doping Layer
Spintech V, Krakow, Poland (2009)
V. Lechner, S. D. Ganichev, V. V. Bel'kov, S. Stachel, P. Olbrich, L. E. Golub, S. A. Tarasenko, D. Schuh, W. Wegscheider und D. Weiss
Einfluss der Position der delta-Dotierschicht auf die Struktur-Inversions-Asymmetrie (SIA) von Quantentrögen
Drittes THz-Frischlinge-Meeting, Berlin (2009)
J. Karch, P. Olbrich, S. A. Tarasenko, T. Schönberger, C. Reitmaier, Z. D. Kvon and S. D. Ganichev
Observation of the orbital circular photogalvanic effect in quantum-confined structures
18th Int. Conf. Electronic Properties Two-Dimensional Systems (EP2DS 18) and 13th Int. Conf. Modulated Semiconductor structures (MSS-13), Kobe, Japan (2009)
J. Karch, J. Kamann, P. Olbrich, E. L. Ivchenko, D. Weiss, and S. D. Ganichev
Ratchet effects induced by terahertz radiation in heterostructures with a lateral periodic potential
Workshop of GDR-E: Semiconductor sources and detectors of THz frequencies, Montpellier, France (2009)
J. Karch, P. Olbrich, S. A. Tarasenko, T. Schönberger, C. Reitmaier, D. Plohmann, Z. D. Kvon und S. D. Ganichev
Experimentelle Beobachtung des orbitalen zirkularen photogalvanischen Effekts in Si-MOS-FETs unter THz-Laser-Anregung
Drittes THz-Frischlinge-Meeting, Berlin (2009)
P. Olbrich, S.D. Ganichev, S.A. Tarasenko, V.V. Bel'kov, W. Eder, D.R. Yakovlev, V. Kolkovsky, W. Zaleszczyk, G. Karczewski, T. Wojtowicz, and D. Weiss
Spin currents in diluted magnetic semiconductors,
Beitrag zur DPG Frühjahrstagung, (2009).
J. Karch, P. Olbrich, C. Reitmaier, D. Plohmann, S. A. Tarasenko, Z. D. Kvon, and S. D. Ganichev
Observation of the orbital circular photogalvanic effect in Si-MOSFETs,
Beitrag zur DPG Frühjahrstagung, (2009).
B. Wittmann, L. Golub, S. Danilov, J. Karch, C. Reitmaier, D. Kvon, N. Vinh, A. van der Meer, B. Murdin, S. Ganichev
Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions,
Beitrag zur DPG Frühjahrstagung, (2009).
Lechner V., Ganichev S.D., Belkov V.V., Olbrich P., Golub L.E., Tarasenko S.A., Schuh D., Wegscheider W., Weiss D., Prettl W.
Controlable Manipulation of Structure Inversion Asymmetry (SIA) of Quantum Wells (QWs) by Shifting the Position of delta-doping Layer,
Beitrag zur DPG Frühjahrstagung, (2009).

2008
S.D. Ganichev,
Magneto-gyrotropic effects in semiconductors aided by terahertz excitation
Moscow International Symphosium on Magnetism (MISM-2008), Moscow (2008)
S.D. Ganichev,
Symmetry and spin dephasing in (110)-grown quantum wells
Workshop of SFB 689: Spinphänomene in reduzierten Dimensionen (2008)
P. Olbrich, R. Ravash, T. Feil, S.D. Danilov, J. Allerdings, D. Weiss, E.L. Ivchenko, and S.D. Ganichev
Terahertz photocurrents in heterostructures with one-dimensional lateral periodic potential
33rd International Conference on Infrared, Millimetre, and Terahertz Waves (IRMMW-THz 33), Pasadena (2008)
P. Olbrich, D. Plohmann, J. Karch, C. Reitmaier, V. Lechner, S.A. Tarasenko, Z.D. Kvon, and S.D. Ganichev
Circular photogalvanic effect due to quantum interference in the terahertz radiation absorption
33rd International Conference on Infrared, Millimetre, and Terahertz Waves (IRMMW-THz 33), Pasadena (2008)
S.N. Danilov, W. Weber, J. Kiermaier, P. Olbrich, D. Schuh, W. Wegscheider, D. Bougeard, G. Abstreiter, W. Prettl and S.D. Ganichev,
All-electric detection of the polarization state of terahertz laser radiation}
22nd General Conference of the Condensed Matter Division of the European Physical Society (CMD 22) (2008)
V. Lechner, S. Giglberger, V. V. Bel'kov, P. Olbrich, D. Plohmann, L. E. Golub, S. A. Tarasenko, S. N. Danilov, D. Schuh, W. Wegscheider, D. Weiss and S. D. Ganichev
Manipulation of Structure Inversion Asymmetry of Quantum Wells by Shifting the Position of delta-doping Layer
Summerschool of SPP 1285: Semiconductor Spinelectronis, Gosslar (2008)
W. Weber, L.E. Golub, S.N. Danilov, J. Karch, C. Reitmaier, B. Wittmann, V.V. Bel'kov, E.L. Ivchenko, Z.D. Kvon, B. Murdin, N.Q. Vinh, A.F.G. van der Meer, and S.D. Ganichev
Quantum ratchet effects in GaN/AlGaN two-dimensional structures
29th International Conference on the Physics of Semiconductors (ICPS 29), Rio de Janeiro (2008)
P. Olbrich, D. Plohmann, C. Reitmaier, J. Karch, V. Lechner, S.A. Tarasenko, D. Kvon, S.D. Ganichev
Observation of the circular and linear photogalvanic effects in Si-MOSFETs
29th International Conference on the Physics of Semiconductors (ICPS 29), Rio de Janeiro (2008)
P. Olbrich, V. Bel’kov, S. Tarasenko, D. Schuh, W. Wegscheider, T. Korn, C. Schueller, D. Weiss, W. Prettl, S. Ganichev
Symmetry and spin dephasing in (110)-grown quantum wells
5th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS V), Foz do Iguaçu (2008)
H. Diehl, V.A. Shalygin, S.N. Danilov, S.A. Tarasenko, V.V. Bel'kov, D. Schuh, W. Wegscheider, W. Prettl, and S.D. Ganichev
Magneto-gyrotropic photogalvanic effects due to inter-subband absorption in quantum wells
15th International Conference on Superlattices, Nanostructures and Nanodevices (ICSSN 15), Natal (2008)
J. Karch, W. Weber, L. E. Golub, S. N. Danilov, C. Reitmaier, B. Wittmann, V. V. Bel'kov, E. L. Ivchenko, Z. D. Kvon, B. Murdin, N. Q. Vinh, A. F. G. van der Meer, and S. D. Ganichev
Quantum ratchet effects in GaN/AlGaN two-dimensional structures
Summerschool of SPP 1285: Semiconductor Spinelectronis, Goslar (2008)
S.D. Ganichev
Symmetry and spin dephasing in (110)-grown quantum wells
Workshop of SPP 1285: Halbleiter Spintronik (2008)
S.D. Ganichev
Spin photogalvanics invited
Spin Physics in Semiconductors Workshop, Montpellier (2008)
S.D. Ganichev,
All-electric detectors of the polarization state of terahertz laser radiation, invited,
5th Int. Workshop on Quantum Heterostructures and THz Electronics and Terahertz Electronics, Regensburg, Germany (2008).
D.R. Khokhlov, L.I. Ryabova, A.V. Nikorich, S.D. Ganichev, S.N. Danilov, and V.I. Bel'kov
Kinetic of intense terahertz laser excitation induced photoconductivity in Pb_(1-x) Sn_x Te(In)
XII Symp. Nanophysics and Nanoelectronics, Nijnii Novgorod, Russia (2008)
P. Olbrich, V.V. Bel’kov, D. Schuh, W. Wegscheider, W. Prettl, and S.D. Ganichev
Magneto-photogalvanic effect in (110) GaAs semiconductor quantum wells,
Beitrag zur DPG Frühjahrstagung (2008).
H. Diehl, V.A. Shalygin, S.N. Danilov, S.A. Tarasenko, V.V. Bel'kov, D. Schuh, W. Wegscheider, W. Prettl, and S.D. Ganichev
Magneto-gyrotropic photogalvanic effects due to inter-subband absorption in quantum wells,
Beitrag zur DPG Frühjahrstagung (2008).
V.V. Bel'kov, S.D. Ganichev,
Spin phenomena in non-magnetic semiconductor quantum wells due to Rashba / Dresselhaus spin splitting, invited.
Proc. Int. Conf. "Spin electronics: Novel Physical Phenomena and Materials" (Tbilisi, 2007), p.24.

2007
S.D. Ganichev,
Intense terahertz excitation of semiconductors, invited,
International Conference on Advanced Science and Technology Terahertz science and technology (2007SICAS), Schenzhen, PL-13 (2007).
S.D. Ganichev,
Zero-bias spin separation, invited,
Nanospintronic Design and Realization, Dresden 2007.
S.D. Ganichev,
Spin drives current, current drives spin: spin-galvanic effect and its reversal, invited,
Winter 2007 Aspen Condensed Matter Conference ``Spins in Nanostructures: Dynamics, Spectroscopy, Manipulation and Control'', Aspen, USA 2007.
S.D. Ganichev,
Zero-bias spin separation and pure spin current, invited,
381th Wilhelm and Else Heraeus Seminar on ``Spin-Polarized Currents in Magnetic Nanostructures'', January 3 - 5, 2007 in the Physikzentrum Bad Honnef, Germany
S.D. Ganichev,
Zero-bias spin separation in semiconductor heterostructures, invited (Hauptvortrag),
Beitrag zur DPG Frühjahrstagung, Regensburg (2007).
S.D. Ganichev, V.V. Bel'kov, S.A. Tarasenko, S.N. Danilov, S. Giglberger, E.L. Ivchenko, D. Weiss, W. Wegscheider, D. Schuh, and W. Prettl
Zero bias spin separation,
Spintech IV, USA (2007).
S. Giglberger, V.V. Bel’kov, P. Olbrich, S.A. Tarasenko, L.E. Golub, S.N. Danilov, D. Schuh, W. Wegscheider, D. Weiss, W. Prettl, and S.D. Ganichev
Manipulation of Rashba Spin-Splittings in (001) GaAs Quantum Wells by shifting the position of $\delta$-doping,
Spintech IV, USA (2007).
S.D. Ganichev, S. Giglberger, V.V. Bel’kov, P. Olbrich, D. Plohmann, L.E. Golub, S.A. Tarasenko, S.N. Danilov, D. Schuh, W. Wegscheider, D. Weiss, and W. Prettl,
Manipulation of Structure Inversion Asymmetry of Quantum Wells by Shifting the Position of delta-doping Layer,
17th Int. Conf. Electronic Properties Two-Dimensional Systems (EP2DS-17) and 13th Int. Conf. Modulated Semiconductor structures (MSS-13) Genova, Italy, (2007).
Z.D. Kvon, S.N. Danilov, N.N. Mikhailov, S.A. Dvoretsky, and S.D.Ganichev
Cyclotron resonance photoconductivity of a two-dimensional electron gas in HgTe quantum wells,
17th Int. Conf. Electronic Properties Two-Dimensional Systems (EP2DS-17) and 13th Int. Conf. Modulated Semiconductor structures (MSS-13) Genova, Italy, (2007).
V.A. Shalygin, S.A. Tarasenko, H. Diehl, and S.D. Ganichev
Circular Photon Drag Effect
8th Russian Conf. on Physics of Semiconductors, Ekaterinburg, Russia, (2003).
B. Wittmann, S.N. Danilov, Z.D. Kvon, N.N.Mikhailov, S.A.Dvoretsky, R. Ravash, W. Prettl, S.D.Ganichev,
Photogalvanic effects in HgTe quantum wells,
13th Int. Conf. Narrow Gap Semiconductors, Guildford, UK (2007).
Z.D. Kvon, S.N. Danilov, N.N. Mikhailov, S.A. Dvoretsky, S.D. Ganichev,
Cyclotron resonance photoconductivity of a two-dimensional electron gas in HgTe quantum wells,
13th Int. Conf. Narrow Gap Semiconductors, Guildford, UK (2007).
H. Diehl, V.A. Shalygin, S.N. Danilov, V.V. Bel'kov, T. Herrle, D. Schuh, W. Wegscheider, S.A. Tarasenko, and S.D. Ganichev
Magneto-Gyrotropic Photocurrents Induced by Intersubband Transitions in Quantum Wells
9th Int. Conf. Intersubband Transitions in Quantum Wells, Ambleside, Cumbria (2007).
S.A. Tarasenko, V.A. Shalygin, H. Diehl, Ch. Hoffmann, S.N. Danilov, T. Herrle, D. Schuh, Ch. Gerl, W. Wegscheider, W. Prettl, and S.D. Ganichev
Circular Photon Drag Effect in Quantum Wells
9th Int. Conf. Intersubband Transitions in Quantum Wells, Ambleside, Cumbria (2007).
S.D. Ganichev, W. Prettl, S.N. Danilov, D.A. Firsov, L.E. Vorobjev, V.A. Shalygin, V.Yu. Panevin, A.N. Sofronov, A.A. Andrianov, A.O. Zakhar'in, A.E. Zhukov, V.S. Mikhrin, and A.P. Vasil'ev
Intraband Emission and Absorption of Terahertz Radiation in GaAs/AlGaAs Quantum Wells
Joint 32st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics (IRMMW-THz2007), Cardiff, UK, 623 (2007).
W. Weber, J. Kiermaier, S.N. Danilov, D. Schuh, Ch. Gerl, W. Wegscheider, D. Bougeard, G. Abstreiter, W. Prettl, and S.D. Ganichev
Picosecond Polarisation Detector for Infrared and Terahertz Radiation
Joint 32st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics (IRMMW-THz2007), Cardiff, UK, 124 (2007).
B. Wittmann, S.N. Danilov, Z.D. Kvon, N.N.Mikhailov, S.A.Dvoretsky, R. Ravash, W. Prettl, and S.D. Ganichev
Photogalvanic effects in HgTe quantum wells
Joint 32st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics (IRMMW-THz2007), Cardiff, UK, 773 (2007).
S.D. Ganichev, S.N. Danilov, W. Weber, D. Schuh, Ch. Gerl, W. Wegscheider, D. Bougeard, G. Abstreiter, W. Prettl,
Picosecond Polarisation Detector for Infrared and Terahertz Radiation,
MRS Spring Meeting, San Francisco, USA (2007).
W. Weber, S. Seidl, L.E. Golub, S.N. Danilov, V.V. Bel'kov, W. Prettl, Z.D. Kvon, Hyun-Ick Cho and Jung-Hee Lee, S.D. Ganichev,
Rashba Spin-Splitting and Spin Currents in GaN Heterojunctions,
MRS Spring Meeting, San Francisco, USA (2007).
V.V. Bel'kov, S.D. Ganichev, S.A. Tarasenko, V.A. Shalygin,
Spin dependent photogalvanic effects in (110)-grown nanostructures,
XI Symp. Nanophysics and Nanoelectronics, N. Novgorod, Russia (2007).
H. Diehl, V.A. Shalygin, Ch. Hoffmann, S.N. Danilov, T. Herrle, S.A. Tarasenko, E.L. Ivchenko, V.V. Bel'kov, D. Schuh, Ch. Gerl, W. Wegscheider, W. Prettl, and S.D. Ganichev,
Spin Photocurrents and Circular Photon Drag Effect in (110)-grown Quantum Well Structures ,
Beitrag zur DPG Frühjahrstagung, Regensburg (2007).
P. Olbrich, V.V. Bel'kov, D. Schuh, W. Wegscheider, W. Prettl and S.D. Ganichev,
Bulk inversion and structure inversion asymmetry in (110) semiconductor quantum wells ,
Beitrag zur DPG Frühjahrstagung, Regensburg (2007).
J. Kiermaier, W. Weber, S.N. Danilov, D. Schuh, Ch. Gerl, W. Wegscheider, D. Bougeard, G. Abstreiter, W. Prettl, and S.D. Ganichev,
Picosecond Polarisazion Detector for Infrared and Terahertz Radiation,
Beitrag zur DPG Frühjahrstagung, Regensburg (2007).
W. Weber, S. Seidl, L.E. Golub, S.N. Danilov, V.V. Bel'kov, W. Prettl, Z.D. Kvon, Hyun-Ick Cho, Jung-Hee Lee, and S.D. Ganichev
Pure Spin Currents and Rashba Spin-Splitting in GaN Heterojunctions,
Beitrag zur DPG Frühjahrstagung, Regensburg (2007).
V.A. Shalygin, D.A. Firsov, L.E. Vorobjev, A.N. Sofronov, V.Yu. Panevin, D.V. Kozlov, S.D. Ganichev, S.N. Danilov, A.V. Andrianov, A.O. Zakhar'in, N.N. Zinov'ev, A.Yu. Egorov, O.V. Bondarenko, A.G. Gladyshev, and V.M. Ustinov
Terahertz emission and absorption at lateral electric field in p-GaAsN/GaAs and n-GaAs/AlGaAs heterostructures,
15th Int. Symp. Nanostructures: Physics and Technology, Novosibirsk, Russia, (2007).

2006
S.D. Ganichev, and V.V. Bel'kov,
Terahertz Radiation Induced Spin Photocurrents in Quantum Wells, invited,
Int. Conf. Coherent Control of the Fundamental Processes in Optics and X-ray-Optics (CCFP'2006), N. Novgorod (2006).
S.D. Ganichev, V.V. Bel'kov, S.A. Tarasenko, S.N. Danilov, S. Giglberger, Ch. Hoffmann, E.L. Ivchenko, D. Weiss, Ch. Gerl, D. Schuh, W. Wegscheider, and W. Prettl,
Zero-bias spin separation, invited,
The Joint 31st International Conference on Infrared and Millimeter Waves and 14th InternationalConference on Terahertz Electronics (IRMMW-THz2006), Shanghai (2006).
S.D. Ganichev,
Spin-galvanic effect and spin orientation by current in non-magnetic semiconductors, invited,
Int. Spintronics Workshop, Singapore (2006).
S.D. Ganichev,
Magneto-Gyrotropic Photogalvanic Effects in Semiconductor Quantum Wells, invited,
Int. Spintronics Workshop, Singapore (2006).
S.D. Ganichev,
Experimental separation of Rashba and Dresselhaus spin-splittings in semiconductor quantum wells, invited,
Int. Symp. "Nanophysics and Nanoelectronics",
N.Novgorod, Russia (2006).
S.D. Ganichev, W. Weber, Z.D. Kvon, V.V. Bel'kov, L.E. Golub, S.N. Danilov, S. Seidl, D. Weiss, W. Prettl, Hyun-Ick Cho, Jung-Hee Lee,
Rashba spin splitting and circular photogalvanic effect in GaN-based heterostructures,
28th Int. Conf. on Phys. of Semiconductors, Vienna,
Austria, (2006).
V.A. Shalygin, K. Wagenhuber, U. Niedermeier, Ch. Gerl, W. Wegscheider, T. Korn, R. Schulz, Ch. Schueller, E.L. Ivchenko, and S.D. Ganichev,
High spin polarization of optically-oriented trions in p-doped GaAs-AlGaAs quantum wells,
28th Int. Conf. on Phys. of Semiconductors, Vienna,
Austria, (2006).
S.D. Ganichev, V.V. Bel'kov, S.A. Tarasenko, S.N. Danilov, S. Giglberger, Ch. Hoffmann, E.L. Ivchenko, D. Weiss, Ch. Gerl, D. Schuh, W. Wegscheider, and W. Prettl,
Zero-bias spin separation,
28th Int. Conf. on Phys. of Semiconductors, Vienna,
Austria, (2006).
V.A. Shalygin, Ch. Hoffmann, S.N. Danilov, S.A. Tarasenko, E.L. Ivchenko, V.V. Bel'kov, D. Schuh, W. Wegscheider, and S.D. Ganichev,
Circular photon drag effect in (110)-grown GaAs quantum wells,
14th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg,
Russia, (2006).
W. Weber, S.D. Ganichev, Z.D. Kvon, V.V. Bel'kov, L.E. Golub, S.N. Danilov, S. Seidl, D. Weiss, W. Prettl, Hyun-Ick Cho, Jung-Hee Lee,
Demonstration of Rashba spin splitting in GaN-based heterostructures,
14th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg,
Russia, (2006).
S.D. Ganichev, V.V. Bel'kov, S.A. Tarasenko, S.N. Danilov, S. Giglberger, Ch. Hoffmann, E.L. Ivchenko, D. Weiss, C. Gerl, D. Schuh, W. Wegscheider, and W. Prettl,
Manifestation of pure spin currents induced by spin dependent scattering processes,
14th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg,
Russia, (2006).
D.A. Firsov, L.E. Vorobjev, V.A. Shalygin, V.Yu. Panevin, S.D. Ganichev, and A.Yu. Egorov,
Terahertz radiation from GaAsN/GaAs heterostructures in lateral electric field.
The Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics (IRMMW-THz2006), Shanghai (2006).
V.V. Bel'kov, S.D. Ganichev, S.N. Danilov, E.L. Ivchenko, S.A. Tarasenko,
Spin current generation in semiconductor heterojunctions,
Int. Symp. "Nanophysics and Nanoelectronics",
N.Novgorod, Russia (2006).
W. Weber, S.D. Ganichev, Z.D. Kvon, V.V. Belkov, L.E. Golub, S.N. Danilov, D.Weiss, W. Prettl, Hyun-Ick Cho, and Jung-Hee Lee,
Rashba Spin Splitting in GaN Heterostrukturen,
Beitrag zur DPG Frühjahrstagung
zusammen mit der Condensed Matter Division der EPS, Dresden (2006).
S. Giglberger, S.D. Ganichev, S.N. Danilov, V.V. Belkov, E.L. Ivchenko, S.A. Tarasenko, D. Weiss, W. Prettl, W. Janzsch, F. Schaffler, and D. Gruber,
Pure Spin Currents by Spin Dependent Electron Phonon Interaction,
Beitrag zur DPG Frühjahrstagung
zusammen mit der Condensed Matter Division der EPS, Dresden (2006).

2005
S.D. Ganichev,
Spin-Galvanic Effect in Semiconductor Quantum Wells, invited
Meeting of the American Physical Society, Los Angeles, USA (2005)
S.D. Ganichev
Experimental separation of Rashba and Dresselhaus spin-splittings in semiconductor quantum wells invited,
Spintech III, Japan (2005).
S.D. Ganichev,
Spin phenomena at direct transitions between size quantized subbands, invited
Int. Conf. on Intersubband Transitions in Quantum Wells, Cape Cod, USA (2005)
S.D. Ganichev,
Spin phenomena in non-magnetic semiconductors due to Rashba/Dresselhaus spin splitting in QWs, invited
Int. School on Phys. of Semiconductors Compounds, Jaszowiece, Poland (2005)
S.D. Ganichev,
Spin photocurrents in quantum wells, invited
International summer school on spintronics, Wittenberg, Germany (2005).
S.D. Ganichev,
Spin galvanic effect, invited,
Int. Workshop on Spin Phenomena in Reduced Dimension,
Regensburg Germany (2005).
W. Weber, S.D. Ganichev, Z.D. Kvon, W. Prettl, Hyun-Ick Cho, and Jung-Hee Lee,
Infrared radiation induced spin photocurrents in GaN quantum well structures,
30th Int. Conf. of Infrared and Millimeter Waves, Williamsburg, MB2-6 (2005).
S.D. Ganichev, S.N. Danilov, V.V. Bel'kov, S. Giglberger, E.L. Ivchenko, S.A. Tarasenko, D. Weiss, W. Prettl, W. Jantsch, F. Schäffler, and D. Gruber,
Manifestation of pure spin currents induced by spin dependent electron phonon interaction,
30th Int. Conf. of Infrared and Millimeter Waves, Williamsburg, TA2-6 (2005).
S.D. Ganichev, A.P.Dmitriev, S.A.Emel'yanov, I.N.Yassievich
Terahertz radiation induced impact ionization of impurity centers,
27th Int. Conf. on Defect in Semiconductors
Japan (2005).
S.D. Ganichev, W. Prettl
Nonlinear absorption due to terahertz radiation induced band-band impact ionization in InSb bulk crystals,
12th Int. Conf. Narrow Gap Semiconductors, Toulouse, France (2005).
S.D. Ganichev, V.V Bel'kov, L.E. Golub, E.L. Ivchenko, Petra Schneider, S. Giglberger, W. Wegscheider, D. Weiss, W. Prettl
Rashba and Dresselhaus spin-splittings in InAs quantum wells measured by spin-galvanic effect,
12th Int. Conf. Narrow Gap Semiconductors, Toulouse, France (2005).
S.D. Ganichev, S.N. Danilov, Petra Schneider, V.V. Bel'kov, L.E. Golub, V.A. Shalygin, S. Giglberger, J. Stahl, W. Wegscheider, D. Weiss, W. Prettl
Electric current induced spin orientation in quantum well structures,
Spintech III, Japan (2005).
S.D. Ganichev, W. Prettl
Nonlinear absorption of terahertz radiation due to light impact ionization,
Meeting of the American Physical Society, Los Angeles, USA (2005).
S. Giglberger, S.D. Ganichev, V.V. Bel'kov, M. Koch, T. Kleine-Ostmann, K. Pierz, E.L. Ivchenko, L.E. Golub, S.A. Tarasenko, W. Prettl
Gate voltage controlled spin photocurrents in heterojunctions,
13th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, (2005).
S.D. Ganichev, S.N. Danilov, Petra Schneider, V.V. Bel'kov, L.E. Golub, V.A. Shalygin, S. Giglberger, J. Stahl, W. Wegscheider, D. Weiss, W. Prettl
Electric current induced spin orientation in quantum well structures,
13th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, (2005).
W. Weber, V. V. Bel'kov, S. D. Ganichev, E. L. Ivchenko, S. A. Tarasenko, S. Giglberger, M. Olteanu, H.-P. Tranitz, S. N. Danilov, Petra Schneider, W. Wegscheider, D. Weiss and W. Prettl
Magneto-Gyrotropic Photogalvanic Effects in Semiconductor Quantum Wells,
13th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, (2005).
W. Weber, V.V. Bel'kov, S.D. Ganichev, E.L. Ivchenko, S.A. Tarasenko, S.N. Danilov, Petra Schneider, S. Giglberger, M. Olteanu, P. Tranitz, W. Wegscheider, D. Weiss und W. Prettl
Magneto-gyrotroper photogalvanischer Effekt in Halbleiter- Quantentrögen,
Beitrag zur DPG Frühjahrstagung 2005, Berlin.
S.D. Ganichev, S.N. Danilov, S. Giglberger, Petra Schneider, V.V. Bel'kov, L.E. Golub, W. Wegscheider, D. Weiss und W. Prettl
Experimenteller Nachweis von strominduzierter Spinorientierung in Quantentrogstrukturen,
Beitrag zur DPG Frühjahrstagung 2005, Berlin.
Petra Schneider, S.D. Ganichev, S.N. Danilov, U. Rössler, W. Wegscheider, D. Weiss, W. Prettl, V.V. Bel'kov, M.M. Glazov, L.E. Golub, D. Schuh
Spinrelaxationszeiten in p-GaAs durch spinsensitive Sättigung der Intersubband-Absorption,
Beitrag zur DPG Frühjahrstagung 2005, Berlin.
S. Giglberger, S.D. Ganichev, V.V. Bel'kov, L.E. Golub, Petra Schneider, W. Wegscheider, D. Weiss und W. Prettl
Experimentelle Bestimmung der Rashba- und Dresselhaus-Beiträge zur Spin-Bahn-Wechselwirkung,
Beitrag zur DPG Frühjahrstagung 2005, Berlin.

2004
S.D. Ganichev, S.N. Danilov, Petra Schneider, V.V. Bel'kov, L.E. Golub, W. Wegscheider, D. Weiss, W. Prettl,
Current induced spin orientation in quantum wells
Ïnternational Workshop on Spintronics" in Bochum, Germany, (2004).
S.D. Ganichev, V.V. Belkov, Petra Schneider, S. Giglberger, S.N. Danilov, W. Weber, M. Olteanu, and W. Prettl,
Spin-orbit coupling in gyrotropic quantum wells by far-infrared radiation induced spin-galvanic effect , invited
29th Int. Conf. of Infrared and Millimeter Waves, Karlsruhe, (2004).
S.D. Ganichev, V.V Bel'kov, Petra Schneider, S. Giglberger, Ch. Hoffmann, W. Prettl
Magneto-Gyrotropic Effect in Semiconductor Quantum Wells
29th Int. Conf. of Infrared and Millimeter Waves, Karlsruhe, (2004).
S.D. Ganichev,
Spin photocurrents in quantum wells, invited
12th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnus, Lithuania (2004).
V.A. Shalygin, L.E. Vorobjev, D.A. Firsov, E. Towe, B.N. Murdin, P.J. Phillips, C.R. Pidgeon, D.A. Cardes, S.A. Gurevich, S.N. Danilov, S.D. Ganichev, and W. Prettl,
Photogalvanic effects under terahertz excitation in tunnel-coupled quantum wells
12th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnus, Lithuania (2004).
S.D. Ganichev,
Terahertz Spin- Photocurrents and Rashba/Dresselhaus spin-orbit coupling, invited
French CNRS-GDR Network ''SESAME'' (''Sur une Electronique de Spin Associant Métaux et Semiconducteurs''), Toulouse, France (2004).
S.D. Ganichev, Petra Schneider, S. Giglberger, W. Wegscheider, D. Weiss, and W. Prettl
Magneto-Gyrotropic Photocurrent in Semiconductor Quantum Wells
3nd Int. Conf. on Physics and Application of Spin Related Phenomena (PASPS2003), S. Barbara, USA (2004).
S.D. Ganichev, Petra Schneider, S. Giglberger, W. Wegscheider, D. Weiss, and W. Prettl,
Determination of Rashba/Dresselhaus Spin-Splittings by spin-photocurrents
3nd Int. Conf. on Physics and Application of Spin Related Phenomena (PASPS2003), S. Barbara, USA (2004).
S.D. Ganichev, Petra Schneider, S. Giglberger, W. Wegscheider, D. Weiss, W. Prettl, V.V Bel'kov, L.E. Golub, and E.L. Ivchenko,
Experimental separation of Rashba and Dresselhaus spin-splittings in semiconductor quantum wells
27th Int. Conf. on Phys. of Semiconductors, Flagstaff, USA (2004).
Petra Schneider, S.D. Ganichev, C. Back, W. Wegscheider, W. Prettl, V.V. Bel'kov, L.E. Golub, M. Oestreich, J. Rudolph, D. Hägele,
Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells
27th Int. Conf. on Phys. of Semiconductors, Flagstaff, USA (2004).
S.D.Ganichev, S.N.Danilov, and W.Prettl,
Suppression of terahertz radiation induced tunnel ionization of deep impurities by an external magnetic field
27th Int. Conf. on Phys. of Semiconductors, Flagstaff, USA (2004).
S.D. Ganichev, Petra Schneider, V.V. Bel'kov, L.E. Golub, E.L. Ivchenko, S. Giglberger, J. Eroms, J. De Boeck, G. Borghs, W. Wegscheider, D. Weiss, and W. Prettl,
Experimental Separation of Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells
12th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, (2004).
V.A. Shalygin, L.E. Vorobjev, D.A. Firsov, E. Towe, S.A. Gurevich, S.N. Danilov, and S.D. Ganichev
Terahertz radiation induced intersubband transitions and photogalvanic effects in tunnel-coupled quantum wells
12th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, (2004).
S. Giglberger, S.D. Ganichev, V.V. Bel'kov, L.E. Golub, E.L. Ivchenko, P. Schneider, W. Wegscheider, D. Weiss, and W. Prettl,
Experimentelle Bestimmung der Rashba- und Dresselhaus-Beiträge zur Spin-Bahn-Wechselwirkung
Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 39/5, (2004).
Petra Schneider, S.D. Ganichev, V.V. Bel'kov, C. Back, M. Oestreich, J. Rudolph, D. Hägele, L.E. Golub, W. Wegscheider, and W. Prettl
Zirkular photogalvanischer Effekt bei Interband-Anregung in Quantentrögen
Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 39/5, (2004).
S.N. Danilov, S.D. Ganichev, J. Zimmermann, and W. Prettl,
Effect of the magnetic field on tunnel ionization of deep impurities by terahertz radiation
Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 39/5, (2004).

2003
S.D. Ganichev, S.N. Danilov, M. Sollinger, J. Zimmermann, A.S. Moskalenko, V.I. Perel, I.N. Yassievich, C. Back, and W. Prettl,
Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation,
Proc. of 28th Int. Conf. of Infrared and Millimeter Waves, ed. N. Hiromoto, Otsu, Shiga, Japan, W5-1 (2003).
S. D. Ganichev, The Infrared Spin-Galvanic Effect in Semiconductor Quantum Wells (invited), 11th Int. Conf. on Narrow Gap Semiconductors, Buffalo, USA, 107 (2003)
S. D. Ganichev, Spin-galvanic effect and spin orientation induced circular photogalvanic effect in quantum well structures (Hauptvortrag, invited), Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 38/5, 265 (2003).
S. D. Ganichev, S. N. Danilov, M. Sollinger, J. Zimmermann, A. S. Moskalenko , V. I. Perel, I. N. Yassievich, and W. Prettl, Suppression of infrared radiation induced tunneling ionization of deep centers by external magnetic field invited, 27th Int. Conf. of Infrared and Millimeter Waves, Sendai, Japan (2003).
S.D. Ganichev, V.V. Bel'kov, and E.L. Ivchenko, Spin photocurrents in semiconductor quantum wells invited, 6th Russian Conf. on Physics of Semiconductors, St. Petersburg, Russia, (2003).
S. D. Ganichev, Spin-galvanic effect in quantum well structures (invited), Int. Workshop on Nanophotonics, N. Novgorod, Russia (2003).
S. D. Ganichev, Terahertz field induced spin-galvanic effect (invited), Int. Workshop on Quantum Heterostructures and THz Electronics and Terahertz Electronics, Regensburg, Germany (2003).
S. A. Tarasenko, V. I. Perel', I. N. Yassievich, S. D. Ganichev, V. V. Bel'kov, and W. Prettl, Spin-dependent tunnelling through a symmetric semiconductor barrier, Spintech II, Int. Conf. and School on Semiconductor Spintronics and Quantum Information Technology, Brügge, Belgium (2003).
S. D. Ganichev, Petra Schneider, J. Kainz, U. Rössler, W. Wegscheider, D. Weiss, W. Prettl, V. V. Bel'kov, L. E. Golub, and D. Schuh, Spin sensitive saturation of heavy-hole - light-hole absorption in p-type GaAs QWs, 15th Int. Conf. on Electronic Properties of Two-Dimensional Systems (EP2DS-15), Nara, Japan (2003).
M. Merrick, D. G. Clarke, B. N. Murdin, S. D. Ganichev, Petra Schneider, W. Wegscheider, D. Weiss, W. Prettl, V. V. Bel'kov, E. L. Ivchenko, S. A. Tarasenko, D. Schuh, P. Murzyn, P. J. Phillips, and C. R. Pidgeon, Spin-galvanic effect by mid-infrared spin orientation in semiconductor quantum wells, Condensed Matter and Materials Physics (CMMP) Conference, Belfast, UK.
S. D. Ganichev, S. N. Danilov, M. Sollinger, J. Zimmermann, A. S. Moskalenko , V. I. Perel, I. N. Yassievich, and W. Prettl, Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation , 22nd Int. Conf. on Defects in Semiconductors (ICDS-22), Aarhus, Dennmark (2003).
V. V. Bel'kov, M. Sollinger, S. D. Ganichev, Petra Schneider, E. L. Ivchenko, S. A. Tarasenko, L. E. Golub, S. Giglberger, W. Wegscheider, D. Weiss, and W. Prettl, Magnetic field induced photogalvanic current in a 2DEG, 13th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS13), Modena, Italy (2003).
S. D. Ganichev, V. V. Bel'kov, Petra Schneider, E. L. Ivchenko, S. A. Tarasenko, W. Wegscheider, D. Weiss, D. Schuh, and W. Prettl, Inversion of circular photogalvanic effect at resonance in n-doped quantum wells, 11th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, 267 (2003).
S. A. Tarasenko, V. I. Perel', I. N. Yassievich, S. D. Ganichev, V. V. Bel'kov, and W. Prettl, Spin injection by electron tunnelling through a semiconductor barrier, 11th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, 277 (2003).
S. D. Ganichev, Petra Schneider, V. V. Bel'kov, J. Kainz, U. Rössler, L. E. Golub, D. Weiss, W. Wegscheider, D. Schuh, and W. Prettl, Spin sensitive saturation of heavy-hole - light-hole absorption in p-type GaAs QWs, 11th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, 269 (2003).
S. D. Ganichev, V. V. Bel'kov, M. Sollinger, Petra Schneider, S. A. Tarasenko, E. L. Ivchenko, and W. Prettl, Magnetfeldinduzierter photogalvanischer Effekt in III/V-Quantentrögen, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 38/5, 253 (2003).
Petra Schneider, S. D. Ganichev, J. Kainz, U. Rössler, W. Wegscheider, D. Weiss, and W. Prettl, Spin-sensitive Bleaching and Spin-Relaxation in QW's, Nonlinear Optics and Excitation Kinetics in Semiconductors, 7th Int. Workshop (NOEKS 2003), Thu11, Karlsruhe, Germany (2003).

2002
S. D. Ganichev, Spin photocurrents in quantum wells (invited), 26th Int. Conf. on Phys. of Semiconductors (ICPS26), Edinburgh, UK, 27 (2002).
S. D. Ganichev, Circular photogalvanic effects induced by spin orientation in quantum wells ( invited), 10th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, (2002).
S. D. Ganichev, Photogalvanic currents in quantum well structures induced by infrared radiation (invited), Int. Conf. on Material Science and Material Properties for Infrared Optoelectronics, Kiev, Ukraine, (2002).
S. D. Ganichev, I. N. Yassievich, and W. Prettl, Tunneling processes induced by terahertz fields, Int. Workshop on Terahertz Bridge, Capri, Italy, (2002).
S. A. Tarasenko, E. L. Ivchenko, V. V. Bel'kov, S. D. Ganichev, M. Sollinger, and W. Prettl, Monopolar Optical Orientation of Electronic Spins in Semiconductors, 26th Int. Conf. on Phys. of Semiconductors (ICPS26), Edinburgh, UK, (2002).
S. D. Ganichev, and W. Prettl, Infrared spin orientation and spin-galvanic effect in semiconductor heterostructures , 26th Int. Conf. of Infrared and Millimeter Waves, San-Diego, USA, 321 (2002).
F. Klappenberger, K. F. Renk, E. Schomburg, R. Summer, S. D. Ganichev, and W. Prettl, Fast GaAs detector for THz radiation, 26th Int. Conf. of Infrared and Millimeter Waves, San-Diego, USA, 253 (2002).
S. D. Ganichev, E. L. Ivchenko, V. V. Bel'kov, S. A. Tarasenko, M. Sollinger, D. Weiss, W. Wegscheider, W. Prettl, Spin-galvanic effect in quantum wells, 2nd Int. Conf. on Physics and Application of Spin Related Phenomena (PASPS2002), Würzburg, Germany (2002).
V. V. Bel'kov, S. D. Ganichev, Petra Schneider, U. Rössler, W. Prettl, E. L. Ivchenko, R. Neumann, K. Brunner, and G. Abstreiter, Spin-photocurrent in p-SiGe quantum wells under terahertz laser irradiation, 2nd Int. Conf. on Physics and Application of Spin Related Phenomena (PASPS2002), Würzburg, Germany (2002).
S. A. Tarasenko, E. L. Ivchenko, V.V. Bel'kov, S. D. Ganichev, D. Schowalter, Petra Schneider, M. Sollinger, W. Prettl, V. M. Ustinov, A. E. Zhukov, and L.E. Vorobjev, Optical spin orientation under inter- and intra-subband transitions in QWs, 2nd Int. Conf. on Physics and Application of Spin Related Phenomena (PASPS2002), Würzburg, Germany (2002).
S. D. Ganichev, U. Rössler, W. Prettl, E. L. Ivchenko, V. V. Bel'kov, R. Neumann, K. Brunner. and G. Abstreiter, Removal of spin degeneracy in SiGe based nanostructures, 10th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, (2001).
M. Sollinger, S. D. Ganichev, V. V. Bel'kov, E. L. Ivchenko, S. A. Tarasenko, F.-P. Kalz, D. Weiss, J. Eroms, W. Wegscheider, and W. Prettl, Der magnetoinduzierte photogalvanische Effekt in n-GaAs/AlGaAs Quantentrögen, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 37/1, 186 (2002).
S. D. Ganichev, S. N. Danilov, M. Sollinger, D. Weiss, W. Wegscheider, W. Prettl, V. V. Bel'kov, and E. L. Ivchenko, Monopolare Spinorientierung in Quantentrogstrukturen und deren Anwendung zur Bestimmung von Spinrelaxationszeiten, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 37/1, 203 (2002).
M. Sollinger, S. D. Ganichev, F.-P. Kalz, U. Rössler, W. Prettl, E. L. Ivchenko, V. V. Bel'kov, R. Neumann, K. Brunner, G. Abstreiter, Photogalvanischer Effekt in Si/Ge-Quantentrögen, Fruehjahrstagung der Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 37/1, 207 (2002).
S. D. Ganichev, Conversion of spin into directed electric current in quantum wells (invited), Int. Symp. on Nanostructures in Photovoltaics, Dresden, Germany, (2001).
S. D. Ganichev, Terahertz radiation induced circular photogalvanic effect in quantum wells. (invited), Int. Workshop on Quantum Heterostructures and THz Electronics, Regensburg, Germany (2001).
S. D. Ganichev, S. N. Danilov, M. Sollinger, D. Weiss, W. Wegscheider, W. Prettl, V. V. Bel'kov, and E. L. Ivchenko, Monopolar spin orientation and determination of spin relaxation times in quantum well structures, MRS Fall Meeting, Boston, USA (2001).
S. D. Ganichev, F.-P. Kalz, W. Prettl, R. Neumann, K. Brunner, G. Abstreiter, and E. L. Ivchenko, Circular photogalvanic effect in Si/Ge semiconductor quantum wells, MRS Fall Meeting, Boston, USA (2001).
S. D. Ganichev, H. Ketterl, and W. Prettl, Fast room temperature detection of state of circular polarization of terahertz radiation, MRS Fall Meeting, Boston, USA (2001).
S. D. Ganichev, E. L. Ivchenko, and W. Prettl, Spin dependent photocurrents in quantum well structures induced by FIR radiation, 25th Int. Conf. of Infrared and Millimeter Waves, Toulouse, France, 31 (2001).
S. D. Ganichev, E. L. Ivchenko, S. N. Danilov, W. Wegscheider, D. Weiss, J. Eroms, and W. Prettl, Conversion of spin into directed electric current in quantum wells, 10th Int. Conf. on Modulated Semiconductor Structures, Linz, Austria (2001).
S. D. Ganichev, H. Ketterl, W. Prettl, I. A. Merkulov, V. I. Perel, I. N. Yassievich, and A. V. Malyshev, Giant negative magnetoresistance in germanium doped by multiply charged impurities, 21st Int. Conf. on Defects in Semiconductors, Giessen, Germany (2001).
S. D. Ganichev, S. N. Danilov, V. V. Bel'kov, E. L. Ivchenko, L. E. Vorobjev, W. Wegscheider, M. Bichler and W. Prettl, Spin sensitive bleaching of absorption in p-type GaAs/AlGaAs QWs, 9th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, (2001).
S. D. Ganichev, V. V. Bel'kov, E. L. Ivchenko, S. A. Tarasenko, M. Sollinger, F.-P. Kalz, D. Weiss, J. Eroms, and W. Prettl, Magnetic field induced circular photogalvanic effect in InAs quantum wells, 9th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia (2001).
S. D. Ganichev, V. V. Bel'kov, M. Sollinger, F.-P. Kalz, D. Weiss, J. Eroms, and W. Prettl, Magnetfeldinduzierter zirkularer photogalvanischer Effekt in InAs Quantentrögen, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 36/1, 170 (2001).
S. D. Ganichev, M. Sollinger, W. Prettl, D. R. Yakovlev, P. Grabs, G. Schmidt, L. Molenkamp, and E. L. Ivchenko, Zirkularer photogalvanischer Effekt in (Be,Zn,Mn)Se II-VI Halbleiter MBE-Epilayer,Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 36/1, 170 (2001).
S. D. Ganichev, S. N. Danilov, J. Eroms, W. Wegscheider, D. Weiss, W. Prettl, E. L. Ivchenko, and M. Bichler, Konversion von Spin in einen gerichteten elektrischen Strom in Quantenfilmen, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 36/1, 227 (2001).
S. D. Ganichev, S. N. Danilov, J. Eroms, W. Wegscheider, D. Weiss, W. Prettl, and E. L. Ivchenko, Conversion of spin into directed electric current in quantum wells, Heraues Seminar, Bad Honnef (2001).
S. D. Ganichev, Terahertz spectroscopy of semiconductors at high excitation level (invited), 2nd Int. Conference Advanced Optical Materials and Devices, Vilnus, Lithuania, 40 (2000).
S. D. Ganichev, H. Ketterl, V. I. Perel, I. N. Yassievich, and W. Prettl, High-frequency regime of electron tunneling, 25th Int. Conf. on Phys. of Semiconductors, Osaka, Japan, ga710KO2 (2000).
V. Novák, V. V. Bel'kov, D. MacMathúna, S. D. Ganichev, and W. Prettl, Self-organized electron density patterns in n-GaAs induced by microwaves, 25th Int. Conf. on Phys. of Semiconductors, Osaka, Japan, aa783EZ6 (2000).
S. D. Ganichev, E. L. Ivchenko, H. Ketterl, W. Prettl, and L. E. Vorobjev, Circular photogalvanic effect in p-GaAs/AlGaAs MQWs, 25th Int. Conf. on Phys. of Semiconductors, Osaka, Japan, ca707LG9 (2000).
S. D. Ganichev, E. L. Ivchenko, H. Ketterl, W. Prettl, and L. E. Vorobjev Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in MQWs, 1st Int. Conf. on Physics and Application of Spin-Related Phenomena in Semiconductors, Sendai, Japan, ca707LG9 (2000).
S. D. Ganichev, H. Ketterl, E. V. Beregulin, and W. Prettl, Spinabhängige Terahertz Nichtlinearität im entarteten Valenzband, Fruehjahrstagung der Deutschen-Physikalischen- Gesellschaft, Verhandl. DPG (VI) 35, 575 (2000).
S. D. Ganichev, H. Ketterl, E. V. Beregulin, and W. Prettl, Spin dependent terahertz nonlinearities in degenerated valence band, NOEKS-2000, Marburg, Germany (2000).
S. D. Ganichev, E. Ziemann, I. N. Yassievich, V. I. Perel, and W. Prettl, Characterization of deep impurities in semiconductors by terahertz tunneling ionization, European MRS - IUMRS - ICEM, Strasbourg, France, M16 (2000).
S. D. Ganichev, Ionization of impurities in semiconductors by intense FIR radiation: from tunneling to multiphoton transitions (invited), Int. Conf. on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, Kiev, Ukraine, 8 (1999).
S. D. Ganichev, Excitation of deep defects by intense terahertz radiation (invited), XXVIII Int. School on Phys. of Semiconductors Compounds, Jaszowiec, Poland, 184 (1999).
S. D. Ganichev, Tunnel ionization of deep impurities in semiconductors induced by terahertz electric fields (invited), 20th Int. Conf. on Defects in Semiconductors, Berkeley, USA, 123 (1999).
A. Ya. Shul'man, S. D. Ganichev, E. M. Dizhur, I. N. Kotel'nikov, E. Zepezauer, and W. Prettl, Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR radiation, 11th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors, Kyoto, Japan 206 (1999).
S. D. Ganichev, H. Ketterl, and W. Prettl, Spin dependent terahertz nonlinearities in degenerated valence band, 11th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11), Kyoto, Japan 191 (1999).
A. S. Moskalenko, S. D. Ganichev, V. I. Perel, and I. N. Yassievich, Magnetic field effect on tunnel ionization of deep impurities by far-infrared radiation, 20th Int. Conf. on Defects in Semiconductors, Berkeley, USA, 311 (1999).
H. Ketterl, E. Ziemann, S. D. Ganichev, A. Belyaev, S. Schmult, and W. Prettl, Terahertz tunnel ionization of DX centers in AlGaAs:Te, 20th Int. Conf. on Defects in Semiconductors, Berkeley, USA, 240 (1999).
A. Ya. Shul'man, I. N. Kotelnikov, E. M. Dizhur, S. D. Ganichev, and W. Prettl, Photo-thermo e.m.f. in metal-semiconductor tunnelling junctions due to giant near field of FIR radiation, 4th Russian Conf. on Physics of Semiconductors, Novosibirsk, Russia, BtB3-4 (1999).
A. Ya. Shul'man, S. D. Ganichev, I. N. Kotel'nikov, E. M. Dizhur, W. Prettl, A. B. Ormont, Yu.V. Fedorov, and W. Prettl, Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition, Int. Workshop on Surface and Interface Optics, Sainte-Maxime, France, 36 (1999).
E. Ziemann, S. D. Ganichev, W. Prettl, A. Istratov, and E. R. Weber, High field limitation of Poole-Frenkel emisson caused by tunneling, MRS Spring Meeting, San-Francisco, USA, 34 (1999).
J. Hirschinger, D. Schowalter, V. V. Bel'kov, V. Novak, F.-J. Niedernostheide, S. D. Ganichev, and W. Prettl, Stoßionisationsinduzierte Strukturbildung in Halbleitern mittels Mikrowellen, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 34, 698 (1999).
E. Ziemann, S. D. Ganichev, H. Ketterl, and W. Prettl, Übergang von Poole-Frenkel-Emission zu phononenunterstützter Tunnelionisation tiefer Störstellen in Halbleitern, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 34, 752 (1999).
S. D. Ganichev, E. Ziemann, H. Ketterl, W. Prettl, I. N. Yassievich, V. I. Perel, I. Wilke and E. E. Haller, Carrier tunneling in high-frequency electric fields (invited), 24th Int. Conf. on Phys. of Semiconductors, Jerusalem, Israel, Th1-D4 (1998).
S. D. Ganichev, E. Ziemann, H. Ketterl, W. Prettl, I. N. Yassievich, and V. I. Perel, Enhancement of tunnel ionization of deep impurities in semiconductors in a high frequency electric field of FIR laser radiation, 23th Int. Conf. of Infrared and Millimeter Waves, Essex, UK, 62 (1998).
A. Ya. Shul'man, I. N. Kotel'nikov, S. D. Ganichev, E. M. Dizhur, A. B. Ormont, E. Zepezauer, and W. Prettl, Near field enhancement of photoresistive effect in n-GaAs tunnel Schottky junctions, 24th Int. Conf. on Phys. of Semiconductors, Jerusalem, Israel, Th-P58 (1998).
E. Ziemann, S. D. Ganichev, I. N. Yassievich, and W. Prettl, Characterization of deep impurities in semiconductors by terahertz tunnel ionization, MRS Spring Meeting, San-Francisco, USA, 83 (1998).
E. Ziemann, S. D. Ganichev, I. N. Yassievich, and W. Prettl, Charakterisierung tiefer Störstellen in Halbleitern durch Tunnel-ionisation in Terahertzfeldern, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 33, 736 (1999).
A. Kalbeck, E. Zepezauer, S. D. Ganichev, W. Korzenietz, and W. Prettl, FIR-Detektion mit c-Achsen-orientierten epitaktischen YBCO-Schichten, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 33, 961 (1998).
E. Zepezauer, A. Ya. Shul'man, I. N. Kotel'nikov, S. D. Ganichev, A. B. Ormont, and W. Prettl, Nahfeld-Verstaerkung des photoresistiven Effektes in n-GaAs/Al- Schottky- Tunnel- kontakten, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 33, 733 (1998).
A. Lohner, M. Huber, S. D. Ganichev, and W. Prettl, Sichtbare Lumineszenz von Hydroxylapatit Ca₅(PO₄)₃(OH) nach resonanter infraroter Anregung, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 33, 600 (1998).
S. D. Ganichev, I. N. Yassievich, and W. Prettl, Ionization of deep impurity centers by FIR radiation (invited) 3rd Russian Conf. on Phys. of Semiconductors, Moscow, Russia, 145 (1997).
A. Ya. Shul'man, I. N. Kotel'nikov, S. D. Ganichev, A. B. Ormont, N. A. Varvanin, and W. Prettl, Giant nonlinearity of photoresistive effect in n-GaAs/Al tunnel junctions with micro- inhomogeneties of metal electrode, 3rd Russian Conf. on Phys. of Semiconductors, Moscow, Russia, 162 (1997).
S. D. Ganichev, E. Ziemann, Th. Gleim, I. N. Yassievich, and W. Prettl, Transition from semi-classical to quantum mechanical limit of terahertz ionization of deep impurities, 22th Int. Conf. of Infrared and Millimeter Waves, Wintergreen, USA, 178 (1997).
S. D. Ganichev, E. Ziemann, Th. Gleim, I. N. Yassievich, and W. Prettl, Frequency dependence of tunnel ionization of deep impurities in terahertz field, 19th Int. Conf. on Defects in Semiconductors, Porto, Portugal, 313 (1997).
S. D. Ganichev, I. N. Yassievich, W. Raab, E. Zepezauer, and W. Prettl, Accumulation of carriers in a shallow donor excited state of GaP:Te, 19th Int. Conf. on Defects in Semiconductors, Porto, Portugal, 251 (1997).
S. D. Ganichev, E. Ziemann, Th. Gleim, I. N. Yassievich, and W. Prettl, Frequency dependence of tunnel ionization of deep impurities in terahertz field, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 32, 700 (1997).
S. D. Ganichev, I. N. Yassievich, W. Raab, E. Zepezauer, and W. Prettl, Long-living shallow donor excited states of GaP:Te, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 32, 693 (1997).
S. D. Ganichev, I. N. Yassievich, and W. Prettl, Tunnel ionization of deep impurities in semiconductors by intense FIR radiation (invited), 21th Int. Conf. of Infrared and Millimeter Waves, Berlin, Germany, CM7 (1996).
S. D. Ganichev, I. N. Yassievich, W. Raab, E. Zepezauer, and W. Prettl, Long living shallow donor excited states and FIR-IR up-conversion in GaP:Te, MRS Fall Meeting, Boston, USA, 194 (1996).
J. Diener, D. I. Kovalev, M. Ben-Chorin, S. D. Ganichev, G. Polisski, and F. Koch, The recombination statistic of the visible photoluminescence of Si nanocrystalls, MRS Fall Meeting, Boston, USA, 401 (1996).
S. D. Ganichev, I. N. Yassievich, W. Raab, E. Zepezauer, and W. Prettl, Recombination kinetic in GaP:Te investigated by phonon assisted tunneling in FIR fields, 21th Int. Conf. of Infrared and Millimeter Waves, Berlin, Germany, CF2 (1996).
S. D. Ganichev, I. N. Yassievich, and W. Prettl, Adiabatic potentials configuration of deep impurities distinguished by phonon assisted tunneling in FIR radiation fields, 23th Int. Conf. on Phys. of Semiconductors, Berlin, Germany, ThP-177 (1996).
S. D. Ganichev, I. N. Kotel'nikov, A. Ya. Shul'man, N. A. Varvanin, B. Mayerhofer, and W. Prettl, FIR radiation heating of 2DEG delta-doped GaAs, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 31, 1487 (1996).
S. D. Ganichev, I. N. Kotel'nikov, N. A. Varvanin, A. Ya. Shul'man, B. Mayerhofer, and W. Prettl, FIR near-zone field enhancement of tunnelling in tunnel Schottky-junction, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 31, 1420 (1998).
J. Diener, M. Ben-Chorin, D. I. Kovalev, S. D. Ganichev and F. Koch, Luminescence from highly excited vibronic states in porous silicon, 2nd Russian Conf. on Phys. of Semiconductors, St. Petersburg, Russia, 2, 204 (1996).
I. N. Kotel'nikov, A. Ya. Shul'man, S. D. Ganichev, and W. Prettl, Influence of near-zone field on photoresistive effect in bulk and delta-doped n-GaAs/metal tunnel junction, 2nd Russian Conf. on Phys. of Semiconductors, St. Petersburg, Russia, 2, 179 (1996).
S. D. Ganichev, A. Ya. Shul'man, I. N. Kotel'nikov, N. A. Varvanin, B. Mayerhofer, and W. Prettl, Hot-electron photoconductivity and photo-e.m.f. of two-dimensional electron gas in delta-doped GaAs, 2nd Russian Conf. on Phys. of Semiconductors, St. Petersburg, Russia, 2, 162 (1996).
I. N. Kotel'nikov, A. Ya. Shul'man, N. A. Mordovets, N. A. Varvanin, S. D. Ganichev, B. Mayerhofer, and W. Prettl, Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs (invited), Int. Semiconductor Device Research Symposium, Charlottesville, USA, W3P-6 (1995).
I. N. Kotel'nikov, A. Ya. Shul'man, S. D. Ganichev, N. A. Varvanin, B. Mayerhofer, and W. Prettl, Non-thermal effect of FIR radiation on tunnel conductance of Schottky-barrier junctions with three- and two-dimensional electron gas, 20th Int. Conf. of Infrared and Millimeter Waves, Orlando, USA, W2.4 (1995).
S. D. Ganichev, and W. Prettl, Adiabatic potentials distinguished by tunneling in FIR radiation Fields, 20th Int. Conf. of Infrared and Millimeter Waves, Orlando, USA, W6.12 (1995).
I. N. Kotel'nikov, A. Ya. Shul'man, N. A. Mordovets, S. D. Ganichev, and W. Prettl, Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs, 2nd Int. Conf. on Phys. of Low-Dimensional Structures, Dubna, Russia, 55 (1995).
J. Diener, M. Ben-Chorin, D. I. Kovalev, S. D. Ganichev, and F. Koch, Luminescence from highly excited vibronic states in porous silicon, 7th Brasilian Workshop on Semiconductor Phys., Rio de Janeiro, Brasil, TU15 (1995).
M. Ben-Chorin, S. D. Ganichev, J. Diener and F. Koch, Far and mid-infrared transient photoconductivity in porous silicon, 7th Brasilian Workshop on Semiconductor Phys., Rio de Janeiro, Brasil, TU20 (1995).
S. D. Ganichev, B. Mayerhofer, J. Diener, I. N. Yassievich, and W. Prettl, Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields, 18th Int. Conf. on Defects in Semiconductors, Sendai, Japan, 342 (1995).
S. D. Ganichev, J. Diener, I. N. Yassievich, W. Prettl, B. K. Meyer, and K. W. Benz, Direct experimental evidence of autolocalization nature of DX- centers, 18th Int. Conf. on Defects in Semiconductors, Sendai, Japan, 106 (1995).
J. Diener, M. Ben-Chorin, D. I. Kovalev, S. D. Ganichev and F. Koch, Excitation of the porous silicon photoluminescence by a multiphoton vibronic process, European MRS, Srasbourg, France, I-7 (1995).
S. D. Ganichev, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and W. Prettl, Investigations of tunnelling process at radiation pressure in Schottky-barrier junction, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 30, Berlin, Germany, 1151 (1995).
S. D. Ganichev, J. Diener, I. N. Yassievich, W. Prettl, B. K. Meyer, and K. W. Benz, Direct evidence for autolocalization states of DX center in Al_xGa_(1-x)Sb, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 30, Berlin, Germany, 1274 (1995).
S. D. Ganichev, J. Diener, M. Ben-Chorin, and F. Koch, Negative photoconductive response in porous silicon by terahertz radiation, MRS Fall Meeting, Boston, USA, 233 (1994).
J. Diener, S. D. Ganichev, M. Ben-Chorin, V. Petrova-Koch, and F. Koch, Luminescence quenching and recovery in porous Si after pulse infrared irradiation, MRS Fall Meeting, Boston, USA, 236 (1995).
M. Ben-Chorin, S. D. Ganichev, J. Diener, and F. Koch, Infrared photoconductivity in porous silicon, MRS Fall Meeting, Boston, USA, 237 (1994).
S. D. Ganichev, and W. Prettl, Tunnel ionization of deep impurities in the electric field of far-infrared radiation, 22th Int. Conf. on Phys. of Semiconductors, Vancouver, Canada, MOP051 (1994).
S. D. Ganichev and W. Prettl, Nonlinear far-infrared absorption in InSb due to the light impact ionization, 19th Int. Conf. of Infrared and Millimeter Waves, Sendai, Japan (1994).
S. D. Ganichev, and W. Prettl, Terahertz tunnel ionization in semiconductors, 19th Int. Conf. of Infrared and Millimeter Waves, Sendai, Japan (1994).
S. D. Ganichev, W. Prettl, and P. Huggard, The FIR tunnel ionization of deep impurities in semiconductors, Int. Conf. on Millimeter and Submillimeter Waves and Applications, San Diego, USA (1994).
S. D. Ganichev, E. L. Ivchenko, R. Ya. Rasulov, I. D. Yaroshetskii, and B. Ya. Averbukh, Intraband multiphoton absorption and linear-circular dichroism in p-Ge, 13th General Conf. of the Condensed matter Division, Europhysics conference 17A, Regensburg, Germany, 1399 (1993).
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, Yu. B. Lyanda -Geller, and I. D. Yaroshetskii, Linear photovoltaic effect in A3B5 semiconductors in FIR wavelengths region, 13th General Conf. of the Condensed matter Division, Europhysics conference 17A, Regensburg, Germany, 1348 (1993).
E. V. Beregulin, S. D. Ganichev, and I. D. Yaroshetskii, Room temperature high sensitive fast detector of FIR radiation, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, Triest, Italy, 15 (1993).
S. D. Ganichev, K. Yu. Gloukh, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and I. D. Yaroshetskii, New fast point detector of FIR radiation, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, Triest, Italy, 15 (1993).
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, G. M. Gusev, Z. D. Kvon, M. Yu. Martisov, A. Ya. Shik, and I. D. Yaroshetskii, Rapid submillimeter photoconductivity and energy relaxation of a two-dimensional electron gas near the surface of silicon, 8th Int. Conf. on Hot Cariers in Semiconductors, Oxford, UK, TuP-20 (1993).
S. D. Ganichev, E. L. Ivchenko, R. Ya. Rasulov, I. D. Yaroshetskii, and B. Ya. Averbukh, FIR multiphoton absorption and photon drag effect in semiconductors with degenerate valence band, 18th Int. Conf. of Infrared and Millimeter Waves, Colchester, UK, (1993).
S. D. Ganichev, E. L. Ivchenko, R. Ya. Rasulov, I. D. Yaroshetskii, and B. Ya. Averbukh, Linear circular dichroism of photon drag current at nonlinear intersubband absorption of light in p-Ge, 1st Russian Conf. on Phys. of Semiconductors, Nizjnii Novgorod, Russia, 2 p. 214 (1993).
E. V. Beregulin, S. D. Ganichev, I. D. Yaroshetskii, P. T. Lang, W. Schatz, and K. F. Renk, Generation of intense short FIR pulses by use of a passively mode-locked high- pressure CO₂ laser as a pump source, 16th Int. Conf. of Infrared and Millimeter Waves, Zurich, Switzerland, (1991).
E. V. Beregulin, S. D. Ganichev, I. D. Yaroshetskii, P. T. Lang, W. Schatz, and K. F. Renk, Abstimmbare Erzeugung von Sub-ns-Ferninfrarot- Pulsen, Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, Verhandl. DPG (VI) 26, Germany, 853 (1991).
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, G. M. Gusev, Z. D. Kvon, A. Ya. Shik, and I. D. Yaroshetskii, FIR spectroscopy of 2DEG at high excitation level, Bulletin of A. F. Ioffe Physico-Technical Institute and Young scientists of the Institute in Utrecht, Leningrad, USSR, (1990).
E. V. Beregulin, S. D. Ganichev, I. D. Yaroshetskii, P. T. Lang, W. Schatz, and K. F. Renk, Devices for generation and detection of subnanosecond IR and FIR radiation pulses, SPIE's Int. Conf. on Physical Concepts of Materials for Novel Optoelectronic Device Applications, Device Phys. and Applications II, Aachen, Germany, 54 (1990).
S. D. Ganichev, K. Yu. Gloukh, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and I. D. Yaroshetskii, Detector for laser radiation on the Schottky-barrier tunnel junctions, Soviet Conference on Photoelectrical effects in semiconductors, Tashkent, USSR, 474 (1989).
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, G. M. Gusev, Z. D. Kvon, M. Yu. Martisov, A. Ya. Shik, and I. D. Yaroshetskii, Rapid submillimeter photoconductivity of a two-dimensional electron gas near the surface of silicon, 3rd Seminar on the electron processes in two-dimensional systems, Novosibirsk, USSR, (1989).
S. D. Ganichev, A. P. Dmitriev, S. A. Emel'yanov, Ya. V. Terent'ev, I. D. Yaroshetskii, and I. N. Yassievich, Light impact ionization in semiconductors, 19th Int. Conf. on the Phys. of Semiconductors, Warsaw, Poland, TuP102 (1989).
S. D. Ganichev, K. Yu. Gloukh, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and I. D. Yaroshetskii, Tunneling in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light, 19th Int. Conf. on the Phys. of Semiconductors, Warsaw, Poland, TuP40 (1989).
A. V. Andrianov, E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, and I. D. Yaroshetskii, Fast detector for the polarization characteristics determination of the pulse IR-FIR laser radiation, Int. Conf. on Millimeter Wave and Far Infrared Technology, Bejing, China, T6.8 (1989).
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, I. D. Yaroshetskii, and I. N. Yassievich, Saturation absorption in p-Ge of IR-FIR radiation and its technical utilization, Int. Conf. on Millimeter Wave and Far Infrared Technology, Bejing, China, TH6.5 (1989).
S. D. Ganichev, K. Yu. Gloukh, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and I. D. Yaroshetskii, Fast detector for far-IR laser beams on the Schottky-barrier tunnel diodes, Int. Conf. on Millimeter Wave and Far Infrared Technology, Bejing, China, T6.4 (1989).
E. V. Beregulin, S. D. Ganichev, and I. D. Yaroshetskii, Fast uncooled detector of the IR-FIR radiation on the base of intraband photoconductivity, Int. Conf. on Millimeter Wave and Far Infrared Technology, Bejing, China, T6.7 (1989).
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, and I. D. Yaroshetskii, Photogalvanic effect in semiconductors in submillimeter region, 7th Soviet Conf. on Nonresonant Interaction of Radiation with Matter, Leningrad, USSR, 424 (1988).
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, and I. D. Yaroshetskii, New mechanism of saturation absorption in semiconductors, 7th Soviet Conf. on Nonresonant Interaction of Radiation with Matter, Leningrad, USSR, 425 (1988).
S. D. Ganichev, K. Yu. Gloukh, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and I. D. Yaroshetskii, Tunneling in Schottky-barrier metal-semiconductor junctions at plasma reflection of laser light, 11th Soviet Seminar on Interaction of Electromagnetic Waves with Semiconductors and Semiconductor-Dielectric Structures 2, Saratov, USSR, 22 (1988).
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, and I. D. Yaroshetskii, New mechanism of saturation absorption in semiconductors, 11th Soviet Seminar on Interaction of Electromagnetic waves with Semiconductors and Semiconductor-Dielectric Structures 2, Saratov, USSR, 44 (1988).
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, Yu. B. Lyanda-Geller, and I. D. Yaroshetskii, Linear photovoltaic effect in gallium arsenide in submillimeter region, 3rd Int. Conf. on Phys. and Technology of GaAs and other A3-B5 Semiconductors, Tatranska Lomnisa, CSSR (1988).
S. D. Ganichev, A. P. Dmitriev, S. A. Emel'yanov, Ya. V. Terent'ev, I. D. Yaroshetskii, and I. N. Yassievich, Light impact ionization in InSb, 3rd Int. Conf. on Phys. and Technology of GaAs and other A3-B5 Semiconductors, Tatranska Lomnisa, CSSR (1988).
A. V. Andrianov, E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, and I. D. Yaroshetskii, Fast device for measuring polarization characteristics of submillimeter and IR laser pulses, 7th Soviet Conf. on Photometric and its Metrological Providence, Moscow, USSR, 61 (1988).
S. D. Ganichev, K. Yu. Gloukh, I. N. Kotel'nikov, N. A. Mordovets, A. Ya. Shul'man, and I. D. Yaroshetskii, Tunneling stimulation in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light, 11th Soviet Conf. on the Phys. of Semiconductors, Kishinev, USSR, 71 (1988).
E. V. Beregulin, S. D. Ganichev, K. Yu. Gloukh, G. M. Gusev, Z. D. Kvon, M. Yu. Martisov, A. Ya. Shik, and I. D. Yaroshetskii, The nature of submillimeter photoconductivity in 2DEG at a silicon surface, 11th Soviet Conf. on the Phys. of Semiconductors, Kishinev, USSR, 139 (1988).
S. D. Ganichev, A. P. Dmitriev, S. A. Emel'yanov, Ya. V. Terent'ev, I. D. Yaroshetskii, and I. N. Yassievich, Impact ionization in semiconductors under the influence of the electric field of an optical wave, 6th Soviet Conference on Plasma and Current Instabilities in Semiconductors, Vilnus, USSR, 220 (1986).
S. D. Ganichev, A. P. Dmitriev, S. A. Emel'yanov, Ya. V. Terent'ev, I. D. Yaroshetskii, and I. N. Yassievich, To the question of impact ionization in p-type InSb, 6th Soviet Conference on Plasma and Current Instabilities in Semiconductors, Vilnus, USSR, 225 (1986).
S. D. Ganichev, Ya. V. Terent'ev, and I. D. Yaroshetskii, Photon-drag fast uncooled detectors of laser radiation for the far-IR and submillimeter regions, 5th Soviet Conf. on Photometric and its Metrological Providence, Moscow, USSR, 140 (1985).
S. D. Ganichev, S. A. Emel'yanov, A. G. Pakhomov, Ya. V. Terent'ev, and I. D. Yaroshetskii, Fast uncooled detector for far-IR and submillimeter laser beams on the base of intraband photoconductivity, 5th Soviet Conf. on Photometric and its Metrological Providence, Moscow, USSR, 139 (1985).
S. D. Ganichev, S. A. Emel'yanov, E. L. Ivchenko, E. Yu. Perlin, and I. D. Yaroshetskii, Multiphoton absorption in p-Ge in the submillimeter range, 12th Soviet Conf. on Coherent and Nonlinear Optics 2, Moscow, USSR, 579 (1985).
S. D. Ganichev, S. A. Emel'yanov, E. L. Ivchenko, E. Yu. Perlin, Ya. V. Terent'ev, A. V. Fedorov, and I. D. Yaroshetskii, New type of nonlinear absorption in semiconductors, 10th Soviet Conf. on the Phys. of Semiconductors 2, Minsk, USSR, 46 (1985).
S. D. Ganichev, S. A. Emel'yanov, E. L. Ivchenko, E. Yu. Perlin, and I. D. Yaroshetskii, Multiphoton absorption in p-Ge in the submillimeter range, 6th Soviet Conf. on Nonresonant Interaction of Radiation with Matter, Palanga, USSR, 103 (1984).
S. D. Ganichev, S. A. Emel'yanov, and I. D. Yaroshetskii, Intraband photoconductivity and relaxation processes in p-type Ge by submillimeter laser excitation, 6th Soviet Conf. on Nonresonant Interaction of Radiation with Matter, Palanga, USSR, 105 (1984).
E. V. Beregulin, S. D. Ganichev, and I. D. Yaroshetskii Nonlinear absorption of CO₂ laser radiation in p- germanium, 6th Soviet conference on Nonresonant Interaction of Radiation with Matter, Palanga, USSR, 129 (1984).
S. D. Ganichev, S. A. Emel'yanov, and I. D. Yaroshetskii, Light electron heating in semiconductors with degenerate band structure under the action of submillimeter radiation, 5th Soviet Conf. on Plasma and Current Instabilities in Semiconductors, Vilnus, USSR, 49 (1983).
E. V. Beregulin, P. M. Valov, S. D. Ganichev, Z. N. Kabakova, and I. D. Yaroshetskii, Investigation of nonlinear radiation absorption in p-Ge and development of low- voltage device for passive mode locking of infrared lasers, 3rd Soviet Conf. on Laser Optics, Leningrad, USSR, 200 (1982).
S. D. Ganichev, S. A. Emel'yanov, and I. D. Yaroshetskii, Drag of carriers by photons in semiconductors in the far infrared and submillimeter spectral ranges, 9th Soviet Conf. on the Phys. of Semiconductors, Baku, USSR, 130 (1982).
E. V. Beregulin, S. D. Ganichev, I. D. Yaroshetskii, and I. N. Yassievich, Mechanisms of energy relaxation under conditions of nonlinear absorption of light in hole germanium, 5th Soviet Conf. on Nonresonant Interaction of Radiation with Matter, Leningrad, USSR, 22 (1981)